Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL548456

C[N+](C)(C)C.O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.46

Full drug profile on Sugi Atlas →

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 9/20 0.46
CA1 P00915 8/20 0.46
MMP1 P03956 6/20 0.46
MMP2 P08253 6/20 0.46
MMP9 P14780 6/20 0.46
MMP8 P22894 6/20 0.46
MMP13 P45452 6/20 0.46
F2 P00734 4/20 0.42
PRSS1 P07477 4/20 0.42
PRSS2 P07478 4/20 0.42
PRSS3 P35030 4/20 0.42
ALDH1A1 P00352 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
THRB P10828 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL4802835 0.98 CA2 (0.48) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL8101338 0.98 CA2 (0.48) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL8104302 0.93 CA2 (0.38) CA2CA1MMP1MMP2MMP9
Hydrogen Sulfide SCHEMBL4241412 0.93 CA2 (0.52) CA2CA1MMP1MMP2MMP9
Methyl Alcohol SCHEMBL28728569 0.90 CA2 (0.50) CA2CA1MMP1MMP2MMP9
Hydrogen Sulfide SCHEMBL1743653 0.90 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL30354089 0.90 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL23932 0.90 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL6915199 0.87 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL6916713 0.87 CA2 (0.52) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7384730-B2 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-10 US claimed
US-20060275697-A1 Top coating composition for photoresist and method of forming photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-07 US claimed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US claimed
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4610254-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2025-09-03 EP disclosed
CN-120019045-A Compound, composition, cured product, method for producing cured product, and method for producing electronic component 株式会社艾迪科 2025-05-16 CN disclosed
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-10-24 US disclosed
EP-4375750-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-05-29 EP disclosed
WO-2024090369-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT 株式会社ADEKA 2024-05-02 WO disclosed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US disclosed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US disclosed
US-20060014106-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-19 US disclosed
US-20050282091-A1 Patterning process and undercoat-forming material SHIN-ETSU CHEMICAL CO.,LTD. (JP) 2005-12-22 US disclosed
US-20050277756-A1 Porous film-forming composition, patterning process, and porous sacrificial film SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050277058-A1 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20040247900-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO. LTD. (JP) 2004-12-09 US disclosed
US-20030139503-A1 Antistatic agent COVESTRO DEUTSCHLAND AG (DE) 2003-07-24 US disclosed
US-6369141-B1 AROMATIC POLYPHOSPHATE, POLYFLUOROETHYLENE, AND SHELL-CORE POLYMER WITH ALKYL (METH)ACRYLATE EXTERIOR LAYER; MECHANICAL PROPERTIES, HEAT RESISTANCE, STABILITY; ELECTRONICS MITSUBISHI ENGINEERING-PLASTICS CORPORATION (JP) 2002-04-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 CA2 291/4885CA1 29/4885MMP1 744/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM CA2 1035/4885CA1 467/4885MMP1 3188/4885
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE FBXL19, SRSF9, CNOT9 CA2 4096/4885CA1 1621/4885MMP1 4569/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.