Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.69 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.69 |
| ▸ | SNCA | P37840 | 1/20 | 0.59 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.56 |
| ▸ | L3MBTL1 | Q9Y468 | 4/20 | 0.55 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.55 |
| ▸ | HTT | P42858 | 3/20 | 0.55 |
| ▸ | LMNA | P02545 | 2/20 | 0.55 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.55 |
| ▸ | GAA | P10253 | 1/20 | 0.51 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.51 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.50 |
| ▸ | CA12 | O43570 | 2/20 | 0.48 |
| ▸ | CA2 | P00918 | 2/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.47 |
| ▸ | MAPT | P10636 | 2/20 | 0.47 |
| ▸ | HPGD | P15428 | 1/20 | 0.47 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.47 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.45 |
| ▸ | PPARG | P37231 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4075925 | 0.98 | MEN1 (0.68) | MEN1KMT2ASNCACYP1A2L3MBTL1 | |
| SCHEMBL8794066 | 0.87 | MEN1 (0.82) | MEN1KMT2AL3MBTL1TDP1HTT | |
| SCHEMBL6741027 | 0.86 | CYP1A2 (0.61) | MEN1KMT2ASNCACYP1A2L3MBTL1 | |
| SCHEMBL6742808 | 0.86 | SMN1; SMN2 (0.60) | MEN1KMT2ASNCAL3MBTL1TDP1 | |
| SCHEMBL13924688 | 0.86 | MEN1 (0.67) | MEN1KMT2ACYP1A2L3MBTL1TDP1 | |
| SCHEMBL2066126 | 0.86 | MEN1 (0.67) | MEN1KMT2ACYP1A2L3MBTL1TDP1 | |
| SCHEMBL383459 | 0.85 | MEN1 (0.56) | MEN1KMT2ACYP1A2HTTLMNA | |
| SCHEMBL4075923 | 0.84 | MEN1 (0.65) | MEN1KMT2ACYP1A2L3MBTL1TDP1 | |
| SCHEMBL4074430 | 0.84 | MEN1 (0.65) | MEN1KMT2ACYP1A2L3MBTL1TDP1 | |
| SCHEMBL6882887 | 0.84 | L3MBTL1 (0.77) | MEN1KMT2AL3MBTL1TDP1HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250004378-A1 | Pattern Forming Method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-01-02 | — | — | US | disclosed |
| EP-4474911-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-11 | — | — | EP | disclosed |
| EP-4474912-A2 | PATTERN FORMING METHOD | Shin-Etsu Chemical Co., Ltd. (JP) | 2024-12-11 | — | — | EP | disclosed |
| US-20240402606-A1 | Composition For Forming Resist Underlayer Film And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-05 | — | — | US | disclosed |
| US-20240337944-A1 | Resist Underlayer Film Material, Pattern Forming Method, And Method Of Forming Resist Underlayer Film | SHIN- ETSU CHEMICAL CO., LTD. (JP) | 2024-10-10 | — | — | US | disclosed |
| EP-4425261-A1 | RESIST UNDERLAYER FILM MATERIAL, PATTERN FORMING METHOD, AND METHOD OF FORMING RESIST UNDERLAYER FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-04 | — | — | EP | disclosed |
| US-20230400770-A1 | Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| EP-4290309-A1 | RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-13 | — | — | EP | disclosed |
| CN-117215155-A | Resist underlayer film material, pattern forming method, and resist underlayer film forming method | 信越化学工业株式会社 | 2023-12-12 | — | — | CN | disclosed |
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| US-20060228648-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-10-12 | — | — | US | disclosed |
| EP-1710230-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-10-11 | — | — | EP | disclosed |
| US-6916591-B2 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-07-12 | — | — | US | disclosed |
| US-20050048395-A1 | Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2005-03-03 | — | — | US | disclosed |
| US-20040229162-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-18 | — | — | US | disclosed |
| US-6713612-B2 | Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-30 | — | — | US | disclosed |
| US-6692893-B2 | ONIUM SALTS OF ARYLSULFONYLOXYNAPHTHALENESULFONATE ANIONS WITH IODONIUM OR SULFONIUM CATIONS; USE IN DEEP ULTRAVIOLET LITHOGRAPHY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-04 | — | — | US | disclosed |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, DNMT3A, PIM3 | MEN1 3540/4885KMT2A 1111/4885SNCA 2662/4885 |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | CCNH, PAH, POLH | MEN1 4466/4885KMT2A 890/4885SNCA 3080/4885 |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | PNN, PI4K2B, PI4K2A | MEN1 4165/4885KMT2A 3202/4885SNCA 3527/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.