Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 7/20 | 0.33 |
| ▸ | GRIN2D | O15399 | 1/20 | 0.32 |
| ▸ | GRIN3B | O60391 | 1/20 | 0.32 |
| ▸ | GRIN1 | Q05586 | 1/20 | 0.32 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.32 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.32 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.32 |
| ▸ | GRIN3A | Q8TCU5 | 1/20 | 0.32 |
| ▸ | PKM | P14618 | 1/20 | 0.31 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12765792 | 0.78 | EPHX2 (0.39) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL12496957 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL12496961 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL3506711 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL61676 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL3506713 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| Idramantone SCHEMBL3506706 | 0.76 | EPHX2 (0.52) | HSD11B1PKMEPHX2 | |
| SCHEMBL13892543 | 0.76 | PKM (0.31) | PKMEPHX2 | |
| SCHEMBL28661222 | 0.76 | EPHX2 (0.32) | EPHX2 | |
| SCHEMBL8585061 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 250 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2202577-B1 | Chemically amplified positive resist composition and resist patterning process | SHINETSU CHEMICAL CO (JP) | 2014-08-27 | — | — | EP | claimed |
| US-20240134280-A1 | Polymer, Chemically Amplified Positive Resist Composition, Resist Patterning Process, And Mask Blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-25 | — | — | US | disclosed |
| US-20240118613-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-11 | — | — | US | disclosed |
| EP-4343433-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, RESIST PATTERNING PROCESS, AND MASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-27 | — | — | EP | disclosed |
| CN-117736362-A | Polymer, chemically amplified positive resist composition, resist pattern forming method, and blank mask | 信越化学工业株式会社 | 2024-03-22 | — | — | CN | disclosed |
| EP-4336261-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-13 | — | — | EP | disclosed |
| CN-117666284-A | Chemically amplified positive resist composition and method for forming resist pattern | 信越化学工业株式会社 | 2024-03-08 | — | — | CN | disclosed |
| CN-117304425-A | Dual cure method and system for fabricating 3D polymeric structures | 浙江迅实科技有限公司 | 2023-12-29 | — | — | CN | disclosed |
| CN-117209694-A | Dual cure method and system for fabricating 3D polymeric structures | 浙江迅实科技有限公司 | 2023-12-12 | — | — | CN | disclosed |
| US-20230393470-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-07 | — | — | US | disclosed |
| US-20050106500-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-19 | — | — | US | disclosed |
| US-20050095533-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-05 | — | — | US | disclosed |
| US-20050008968-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-13 | — | — | US | disclosed |
| US-20050003303-A1 | Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-06 | — | — | US | disclosed |
| US-20040234884-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |
| US-20040234885-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |
| US-20040176630-A1 | Alicyclic methacrylate having oxygen substituent group on alpha-methyl | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-09 | — | — | US | disclosed |
| CN-1432873-A | Acid generator, sulfonic acid derivative and radiation-sensitive resin composition | JSR CORP (JP) | 2003-07-30 | — | — | CN | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20040176630-A1 | Alicyclic methacrylate having oxygen substituent group on alpha-methyl | DNMT3A, DNMT1, KDM2A | HSD11B1 2999/4885GRIN2D 1242/4885GRIN3B 2936/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | HSD11B1 3894/4885GRIN2D 1205/4885GRIN3B 3556/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.