Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 2/20 | 0.59 |
| ▸ | ESR2 | Q92731 | 2/20 | 0.59 |
| ▸ | APP | P05067 | 4/20 | 0.56 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.50 |
| ▸ | NQO2 | P16083 | 3/20 | 0.48 |
| ▸ | PTGS1 | P23219 | 3/20 | 0.48 |
| ▸ | PTGS2 | P35354 | 3/20 | 0.48 |
| ▸ | F3 | P13726 | 1/20 | 0.46 |
| ▸ | LMNA | P02545 | 2/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.44 |
| ▸ | MAOB | P27338 | 2/20 | 0.43 |
| ▸ | POLB | P06746 | 1/20 | 0.43 |
| ▸ | MAOA | P21397 | 1/20 | 0.43 |
| ▸ | RAB9A | P51151 | 1/20 | 0.43 |
| ▸ | KDM1A | O60341 | 1/20 | 0.43 |
| ▸ | CA12 | O43570 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL482619 | 0.91 | CYP3A4 (0.50) | ESR1ESR2APPMAPTKDM4E | |
| SCHEMBL8900804 | 0.84 | MAPT (0.48) | ESR1ESR2MAPTALDH1A1PTGS1 | |
| SCHEMBL243079 | 0.78 | MAOB (0.52) | MAPTKDM4EALDH1A1LMNAGAA | |
| SCHEMBL23458229 | 0.78 | MAOB (0.52) | MAPTKDM4EALDH1A1LMNAGAA | |
| SCHEMBL4614234 | 0.78 | MAOB (0.52) | MAPTKDM4EALDH1A1LMNAGAA | |
| Acrylic Acid Methyl Ester SCHEMBL2706183 | 0.76 | CA12 (0.48) | ESR1MAPTKDM4EALDH1A1F3 | |
| SCHEMBL3700257 | 0.76 | LMNA (0.50) | ESR1MAPTKDM4EALDH1A1LMNA | |
| SCHEMBL1420823 | 0.76 | ALDH1A1 (0.53) | MAPTKDM4EALDH1A1PTGS2LMNA | |
| SCHEMBL14490241 | 0.75 | MAPT (0.41) | APPMAPTKDM4EALDH1A1PTGS1 | |
| SCHEMBL13759926 | 0.75 | MAPT (0.41) | APPMAPTKDM4EALDH1A1PTGS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2033966-B1 | Novel photoacid generators, resist compositons, and patterning processes | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| EP-1099983-B1 | Chemically amplified positive resist composition and patterning method | SHINETSU CHEMICAL CO (JP) | 2014-08-06 | — | — | EP | disclosed |
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | disclosed |
| US-8541158-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8343694-B2 | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-01 | — | — | US | disclosed |
| US-8283104-B2 | Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | disclosed |
| US-6416928-B1 | HALOGENONIUM OR SULFONIUM SALTS OF SULFONATED DIPHENYLALKANE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-07-09 | — | — | US | disclosed |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| US-6395446-B1 | CONTAINING SULFONYLDIAZOMETHANE COMPOUND AS ACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-28 | — | — | US | disclosed |
| US-6338931-B1 | PHOTOACID GENERATOR OF SULFONYLDIAZOMETHANE COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-01-15 | — | — | US | disclosed |
| US-20010035394-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1099983-A1 | Chemically amplified positive resist composition and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-05-16 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | ABL1, PI4K2B, FES | ESR1 1112/4885ESR2 2885/4885APP 4494/4885 |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | PNN, PI4K2B, PI4K2A | ESR1 1449/4885ESR2 3038/4885APP 4590/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.