SCHEMBL4848754

SCHEMBL4848754

C[Si](C)(Cl)c1ccccc1CCl

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.36
ALDH1A1 P00352 2/20 0.36
KMT2A Q03164 1/20 0.34
PNMT P11086 1/20 0.33
CYP1A2 P05177 1/20 0.31
CYP2D6 P10635 1/20 0.31
NFKB1 P19838 1/20 0.31
CYP2C19 P33261 1/20 0.31
HSD17B10 Q99714 1/20 0.31
MAPT P10636 1/20 0.31
LMNA P02545 2/20 0.31
BLM P54132 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4432992 0.84 TSHR (0.38) TSHRALDH1A1KMT2APNMTCYP1A2
SCHEMBL3799466 0.82 GABRA1 (0.39) PNMTMAPT
SCHEMBL937353 0.81 ALDH1A1 (0.39) TSHRALDH1A1KMT2APNMT
SCHEMBL1459198 0.77 TSHR (0.32) TSHRALDH1A1MAPTLMNA
SCHEMBL15453503 0.77 ALDH1A1 (0.33) TSHRALDH1A1KMT2APNMT
SCHEMBL3772407 0.75 GABRA1 (0.40) ALDH1A1KMT2ALMNA
SCHEMBL240617 0.74 ALDH1A1 (0.34) TSHRALDH1A1KMT2APNMT
SCHEMBL2003392 0.74 ALDH1A1 (0.34) TSHRALDH1A1KMT2APNMT
SCHEMBL31143634 0.74 ALDH1A1 (0.34) TSHRALDH1A1KMT2APNMT
SCHEMBL29402531 0.74 ALDH1A1 (0.32) TSHRALDH1A1KMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7463400-B1 Electrochromic display device FUJI XEROX CO., LTD. (JP) 2008-12-09 US disclosed
US-6284365-B1 FOR CONTROLLING PHYSICAL PROPERTIES OF SURFACE AND INTERFACE OF SOLID ARTICLE SUCH AS WETTABILITY, ADHESIVE PROPERTY, SURFACE ENERGY, DISPERSABILITY, CHEMICAL RESISTANCE FUJI XEROX CO., LTD. (JP) 2001-09-04 US disclosed
EP-0432905-B1 Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof FUJITSU LTD (JP) 1998-02-04 EP disclosed
US-5484687-A PHOTORESISTS, THREE-DIMENSIONAL, POLYSILSESQUIOXANES FUJITSU LIMITED (JP) 1996-01-16 US disclosed
US-5240813-A POLYSILPHENYLENESILOXANE, PRODUCTION PROCESS THEREOF, AND RESIST MATERIAL AND SEMICONDUCTOR DEVICE FORMED THEREOF FUJITSU LIMITED (JP) 1993-08-31 US disclosed
EP-0432905-A2 Polyisophenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof FUJITSU LIMITED (JP) 1991-06-19 EP disclosed