SCHEMBL4858555

SCHEMBL4858555

O=C(CBr)ON1CCOCC1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.44
GSK3B P49841 1/20 0.40
TSHR P16473 3/20 0.37
HSD17B10 Q99714 2/20 0.36
KDM4E B2RXH2 2/20 0.36
LMNA P02545 2/20 0.36
ALDH1A1 P00352 2/20 0.36
GLA P06280 2/20 0.36
POLB P06746 2/20 0.36
RAB9A P51151 2/20 0.36
MAPT P10636 1/20 0.36
HPGD P15428 1/20 0.36
KMT2A Q03164 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
ALOX15 P16050 1/20 0.35
SMN1; SMN2 Q16637 3/20 0.34
CA12 O43570 1/20 0.34
CA1 P00915 1/20 0.34
CA9 Q16790 1/20 0.34
RECQL P46063 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6025476 0.87 L3MBTL1 (0.38) L3MBTL1GSK3BTSHRHSD17B10KDM4E
SCHEMBL1194369 0.83 TSHR (0.46) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL9162523 0.81 L3MBTL1 (0.45) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL28534605 0.80 ALDH1A1 (0.36) L3MBTL1HSD17B10KDM4ELMNAALDH1A1
SCHEMBL8159185 0.79 L3MBTL1 (0.39) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL14812491 0.79 L3MBTL1 (0.39) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL9204997 0.79 L3MBTL1 (0.39) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL27547929 0.79 KDM4E (0.41) L3MBTL1TSHRHSD17B10KDM4ELMNA
SCHEMBL2963308 0.79 TSHR (0.46) L3MBTL1TSHRHSD17B10KDM4ELMNA
Hydrochloric Acid SCHEMBL20599523 0.78 TSHR (0.44) L3MBTL1TSHRHSD17B10KDM4ELMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7351521-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2008-04-01 US disclosed
US-20070172762-A1 Photoresist composition for deep ultraviolet lithography DAMMEL RALPH R 2007-07-26 US disclosed
US-20070154841-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2007-07-05 US disclosed
US-7211366-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-05-01 US disclosed
CN-1809789-A Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA (US) 2006-07-26 CN disclosed
EP-1602011-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ Electronic Materials USA Corp. (US) 2005-12-07 EP disclosed
WO-2004074928-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-02 WO disclosed
US-20040166433-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US disclosed
US-6210859-B1 SENSITIVITY, RESOLUTION, HEAT-RESISTANCE AND STABILITY AFTER EXPOSURE, ULTRAFINE PATTERNS CAN BE FORMED IRRESPECTIVE OF ANY SUBSTRATE, LARGER SCOPE OF EXPOSURE CAN BE OBTAINED, A MODIFIEDPOLYHYDROXYSTYRENE COPOLYMER KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2001-04-03 US disclosed