Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL27516075 | 0.87 | — | — | |
| Water SCHEMBL27801580 | 0.87 | — | — | |
| Water SCHEMBL28308231 | 0.87 | — | — | |
| Water SCHEMBL27714538 | 0.87 | — | — | |
| Water SCHEMBL10006512 | 0.87 | — | — | |
| Water SCHEMBL21144536 | 0.87 | — | — | |
| Water SCHEMBL25436825 | 0.67 | — | — | |
| Water SCHEMBL609928 | 0.67 | — | — | |
| Water SCHEMBL2520979 | 0.67 | — | — | |
| Water SCHEMBL22612537 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1081 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110467815-A | Low-loss and insulating resin combination and insulating film and product | SAMSUNG ELECTRONICS CO LTD | 2019-11-19 | — | — | CN | claimed |
| CN-106298894-B | The forming method of semiconductor devices | ZHONGXIN INTERNATIONAL INTEGRATED CIRCUIT MANUFACTURING (SHANGHAI) CO., LTD. (CN) | 2019-11-01 | — | — | CN | claimed |
| CN-105990428-B | A kind of semiconductor devices and its manufacturing method and electronic device | 中芯国际集成电路制造(上海)有限公司 | 2019-10-25 | — | — | CN | claimed |
| CN-110233098-A | Semiconductor devices and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2019-09-13 | — | — | CN | claimed |
| CN-110233095-A | Gate dielectric layer, the manufacturing method of field-effect tube and field-effect tube device | 中芯国际集成电路制造(上海)有限公司 | 2019-09-13 | — | — | CN | claimed |
| CN-110164889-A | Imaging sensor and forming method thereof | 德淮半导体有限公司 | 2019-08-23 | — | — | CN | claimed |
| CN-107253696-B | A kind of pixel structure of micro-metering bolometer and preparation method thereof | 烟台睿创微纳技术股份有限公司 | 2019-01-29 | — | — | CN | claimed |
| CN-108922889-A | Semiconductor devices | 三星电子株式会社 | 2018-11-30 | — | — | CN | claimed |
| CN-108511476-A | Back side illumination image sensor and forming method thereof | 德淮半导体有限公司 | 2018-09-07 | — | — | CN | claimed |
| CN-105514163-B | Fin formula field effect transistor and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-09-07 | — | — | CN | claimed |
| CN-101140869-A | Manufacturing method of metal oxide semiconductor device | SEMICONDUCTOR MFG INT SHANGHAI (CN) | 2008-03-12 | — | — | CN | claimed |
| CN-101095223-A | A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | INTEL CORP (US) | 2007-12-26 | — | — | CN | claimed |
| CN-101036225-A | Semiconductor device with high-k gate dielectric and metal gate electrode | INTEL CORP (US) | 2007-09-12 | — | — | CN | claimed |
| CN-101010788-A | A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | INTEL CORP (US) | 2007-08-01 | — | — | CN | claimed |
| US-6914261-B2 | Light emitting diode module | LAMBDA OPTO TECHNOLOGY CO., LTD. (TW) | 2005-07-05 | — | — | US | claimed |
| US-20050077839-A1 | LIGHT EMITTING DIODE MODULE | LEATEC FINE CERAMICS CO., LTD. (TW) | 2005-04-14 | — | — | US | claimed |
| CN-1551300-A | Method for making a semiconductor device having a metal gate electrode | ض� | 2004-12-01 | — | — | CN | claimed |
| CN-1522463-A | A method for making a semiconductor device having a high-k gate dielectric | ض� | 2004-08-18 | — | — | CN | claimed |
| CN-1384512-A | Laminated dielectrical sheet for capacity and its production process | HIPRAY CORP (US) | 2002-12-11 | — | — | CN | claimed |
| US-5539695-A | Fast access multi-bit random access memory | SOLIDAS CORPORATION (US) | 1996-07-23 | — | — | US | claimed |