SCHEMBL4998246

SCHEMBL4998246

C=C(C(=O)OCC(C)CCCC)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
TSHR P16473 5/20 0.36
CYP3A4 P08684 1/20 0.34
ATM Q13315 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
FAAH O00519 9/20 0.33
ACE2 Q9BYF1 1/20 0.33
CES2 O00748 3/20 0.33
CES1 P23141 5/20 0.33
MEN1 O00255 1/20 0.33
CYP1A2 P05177 1/20 0.33
KMT2A Q03164 1/20 0.33
HSD17B10 Q99714 1/20 0.33
MAPT P10636 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL221001 0.83 TSHR (0.55) CA1CA2TSHRCYP3A4ATM
SCHEMBL8646938 0.81 CA2 (0.44) CA1CA2TSHRCYP3A4ATM
SCHEMBL5011169 0.81 FAAH (0.40) CA1CA2FAAHCES2CES1
SCHEMBL1897951 0.80 TSHR (0.58) CA1CA2TSHRCYP3A4ATM
SCHEMBL4338291 0.79 TSHR (0.43) TSHR
SCHEMBL1959455 0.78 TSHR (0.59) TSHR
SCHEMBL29220278 0.76 CA2 (0.40) CA1CA2TSHRCYP3A4ATM
SCHEMBL5946579 0.76 TSHR (0.42) TSHRMAPT
SCHEMBL221345 0.76 TSHR (0.52) TSHRATMTDP1FAAHCES2
SCHEMBL21723488 0.76 FAAH (0.45) CA1FAAHCES2CES1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10678132-B2 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM CORPORATION (JP) 2020-06-09 US disclosed
EP-1970760-B1 Positive resist composition containing a resin for hydrophobilizing resist surface, method for production thereof FUJIFILM CORP (JP) 2012-12-26 EP disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
EP-1970760-A1 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM Corporation (JP) 2008-09-17 EP disclosed