SCHEMBL4999747

SCHEMBL4999747

CC(C)(CC1=CCCCC1)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.38
ALOX15 P16050 2/20 0.37
CXCR3 P49682 2/20 0.35
RAB9A P51151 2/20 0.35
PKM P14618 1/20 0.33
SMN1; SMN2 Q16637 3/20 0.32
NPC1 O15118 1/20 0.32
KMT2A Q03164 2/20 0.32
NPSR1 Q6W5P4 2/20 0.32
TSHR P16473 1/20 0.32
MEN1 O00255 1/20 0.32
USP2 O75604 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3893410 0.80 ALDH1A1 (0.40) ALDH1A1ALOX15RAB9APKMSMN1; SMN2
SCHEMBL5002978 0.79 ALDH1A1 (0.35) ALDH1A1ALOX15CXCR3RAB9APKM
SCHEMBL10917130 0.78 ALDH1A1 (0.42) ALDH1A1ALOX15CXCR3RAB9APKM
SCHEMBL4989990 0.71 NPSR1 (0.36) ALDH1A1ALOX15RAB9ASMN1; SMN2NPC1
SCHEMBL4842355 0.70 ALDH1A1 (0.38) ALDH1A1ALOX15CXCR3RAB9APKM
SCHEMBL5005556 0.67
SCHEMBL177129 0.66
SCHEMBL1050390 0.66
SCHEMBL10596387 0.66 ALDH1A1 (0.42) ALDH1A1ALOX15RAB9APKMSMN1; SMN2
SCHEMBL295994 0.65 CXCR3 (0.37) ALDH1A1ALOX15CXCR3RAB9APKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed