SCHEMBL500411

SCHEMBL500411

N#CCCC1CN(CCC(=O)O)CCO1

nearest known ligand 0.45

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
GLA P06280 1/20 0.45
HSD17B10 Q99714 2/20 0.42
DRD4 P21917 8/20 0.36
MAPT P10636 2/20 0.35
DRD2 P14416 2/20 0.34
DRD3 P35462 2/20 0.34
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
ALDH1A1 P00352 3/20 0.31
PKM P14618 1/20 0.31
KMT2A Q03164 2/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL499919 0.87 GLA (0.46) GLAHSD17B10DRD4MAPTDRD2
SCHEMBL499961 0.80 GLA (0.45) GLADRD4MAPTDRD2DRD3
SCHEMBL500357 0.79 GLA (0.50) GLAHSD17B10DRD4MAPTDRD3
SCHEMBL500330 0.79 GLA (0.44) GLADRD4DRD2DRD3CYP1A2
SCHEMBL4190132 0.78 GLA (0.41) GLAHSD17B10DRD4DRD2DRD3
SCHEMBL499881 0.77 GLA (0.42) GLADRD4DRD2DRD3CYP1A2
SCHEMBL20750562 0.77 DRD3 (0.43) GLADRD4DRD2DRD3CYP1A2
SCHEMBL19437244 0.76 PDK1 (0.38) HSD17B10DRD4
SCHEMBL499886 0.74 GLA (0.45) GLAHSD17B10ALDH1A1PKMKMT2A
SCHEMBL18531912 0.73 CCR2 (0.40) GLAHSD17B10DRD4DRD2DRD3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-8105760-B2 Patterning process and pattern surface coating composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
EP-1580598-A2 Positive resist composition for immersion exposure and pattern-forming method using the same Fuji Photo Film Co. Ltd. (JP) 2005-09-28 EP disclosed
US-20050208419-A1 Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits FUJI PHOTO FILM CO., LTD. 2005-09-22 US disclosed