Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APP | P05067 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1324992 | 0.94 | — | — | |
| SCHEMBL1324959 | 0.94 | — | — | |
| SCHEMBL25215380 | 0.77 | ACE (0.34) | — | |
| SCHEMBL9181452 | 0.75 | CYP1A2 (0.40) | — | |
| SCHEMBL15264476 | 0.73 | KMT2A (0.33) | — | |
| SCHEMBL7626957 | 0.72 | LMNA (0.39) | — | |
| SCHEMBL17539994 | 0.70 | MAPK1 (0.40) | — | |
| SCHEMBL949470 | 0.69 | MGLL (0.50) | — | |
| SCHEMBL19619374 | 0.69 | FAAH (0.32) | — | |
| SCHEMBL8228528 | 0.69 | CYP2C19 (0.44) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-107848983-B | Compound, resin, material for forming underlayer film for lithography, resist pattern, method for forming circuit pattern, and method for purifying resist pattern | 三菱瓦斯化学株式会社 | 2021-07-09 | — | — | CN | disclosed |
| CN-107406383-B | Compound for lithography, resin, and underlayer film forming material | 三菱瓦斯化学株式会社 | 2021-01-26 | — | — | CN | disclosed |
| CN-107924131-B | Underlayer film-forming material for lithography, use of composition thereof for forming underlayer film for lithography, and method for forming resist pattern | 三菱瓦斯化学株式会社 | 2020-12-25 | — | — | CN | disclosed |
| US-8105760-B2 | Patterning process and pattern surface coating composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8057982-B2 | Monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20090053657-A1 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-6541179-B2 | A chemically amplified, positive resist comprising a sulfonium salt compound as photoacid generator, a base resin containing a monomer having alicyclic structure, and a solvent; heat treatment and exposure | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20010033990-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |