SCHEMBL501988

SCHEMBL501988

O=C(OCCN1CCOCC1)c1ccc2ccccc2c1

nearest known ligand 0.75

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 2/20 0.75
ATM Q13315 1/20 0.66
SMN1; SMN2 Q16637 2/20 0.65
DRD3 P35462 1/20 0.65
L3MBTL1 Q9Y468 1/20 0.65
CYP1A2 P05177 1/20 0.62
CYP2D6 P10635 1/20 0.62
CYP2C19 P33261 1/20 0.62
GAA P10253 2/20 0.59
KDM4E B2RXH2 2/20 0.59
PKM P14618 1/20 0.59
ALDH1A1 P00352 2/20 0.58
HPGD P15428 1/20 0.58
LMNA P02545 1/20 0.55
KMT2A Q03164 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL501800 0.88 HRH3 (0.81) HRH3DRD3CYP2D6KDM4EHPGD
SCHEMBL501928 0.87 HRH3 (0.79) HRH3DRD3CYP2D6KDM4EHPGD
SCHEMBL12550692 0.85 HRH3 (0.79) HRH3ATMSMN1; SMN2DRD3L3MBTL1
SCHEMBL501720 0.84 ATM (0.76) ATMSMN1; SMN2L3MBTL1CYP1A2CYP2D6
SCHEMBL14369843 0.82 ATM (0.74) ATMSMN1; SMN2L3MBTL1CYP1A2CYP2D6
SCHEMBL5350446 0.82 ATM (0.74) ATMSMN1; SMN2L3MBTL1CYP1A2CYP2D6
SCHEMBL27512308 0.82 GAA (0.60) HRH3ATMSMN1; SMN2L3MBTL1GAA
SCHEMBL501945 0.82 ATM (0.73) ATMSMN1; SMN2L3MBTL1GAAKDM4E
SCHEMBL19321935 0.81 L3MBTL1 (0.70) HRH3ATMSMN1; SMN2L3MBTL1GAA
SCHEMBL16176818 0.81 ATM (0.67) HRH3ATMSMN1; SMN2L3MBTL1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20220004101-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-06 US disclosed
US-10792489-B2 Bio-electrode composition, bio-electrode, and method for manufacturing the bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-06 US disclosed
US-10734132-B2 Bio-electrode composition, bio-electrode, method for manufacturing the bio-electrode, and polymer compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-04 US disclosed
EP-2482132-B1 Resist pattern forming process SHINETSU CHEMICAL CO (JP) 2019-10-16 EP disclosed
US-20180223133-A1 BIO-ELECTRODE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING THE BIO-ELECTRODE, AND POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-09 US disclosed
US-20180223133-A1 BIO-ELECTRODE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING THE BIO-ELECTRODE, AND POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-09 US disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 HRH3 6/4885ATM 3921/4885SMN1; SMN2 4173/4885
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, EGLN1, RER1 HRH3 282/4885ATM 1218/4885SMN1; SMN2 3853/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R HRH3 11/4885ATM 3925/4885SMN1; SMN2 4504/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.