SCHEMBL503386

SCHEMBL503386

CCCCCCCCS(=O)(=O)O.O=C(c1ccccc1)C(O)(CO)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.43
CES1 P23141 4/20 0.40
CES2 O00748 3/20 0.40
MMP1 P03956 1/20 0.39
MMP9 P14780 1/20 0.39
MMP13 P45452 1/20 0.39
KCNH2 Q12809 1/20 0.39
SCN5A Q14524 3/20 0.38
SCN9A Q15858 3/20 0.38
EPHX2 P34913 1/20 0.36
PTGS2 P35354 1/20 0.36
PTPN1 P18031 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL503876 1.00 NAAA (0.43) NAAACES1CES2MMP1MMP9
SCHEMBL28379065 1.00 NAAA (0.43) NAAACES1CES2MMP1MMP9
SCHEMBL2903855 1.00 NAAA (0.43) NAAACES1CES2MMP1MMP9
SCHEMBL11057570 0.82 CES1 (0.45) CES1
SCHEMBL28356141 0.80 CES1 (0.38) NAAACES1CES2PTGS2PTPN1
SCHEMBL9575220 0.79 CES1 (0.40) NAAACES1CES2MMP1MMP9
SCHEMBL36374 0.78 CES1 (0.48) CES1CES2PTPN1
SCHEMBL11667545 0.78 SCN5A (0.51) NAAACES1CES2KCNH2SCN5A
SCHEMBL8753682 0.78 SCN5A (0.51) NAAACES1CES2KCNH2SCN5A
SCHEMBL15865137 0.78 SCN5A (0.51) NAAACES1CES2KCNH2SCN5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 90 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
US-10095112-B2 Multiple trigger photoresist compositions and methods IRRESISTIBLE MATERIALS LTD (GB) 2018-10-09 US disclosed
US-20180246408-A1 MULTIPLE TRIGGER PHOTORESIST COMPOSITIONS AND METHODS IRRESISTIBLE MATERIALS, LTD (GB) 2018-08-30 US disclosed
US-9383646-B2 Two-step photoresist compositions and methods IRRESISTIBLE MATERIALS LTD (GB) 2016-07-05 US disclosed
US-9323149-B2 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2016-04-26 US disclosed
US-9256126-B2 Methanofullerenes IRRESISTIBLE MATERIALS LTD (GB) 2016-02-09 US disclosed
EP-2920142-A1 METHANOFULLERENES Robinson, Alex Philip, Graham (GB) 2015-09-23 EP disclosed
US-20150241773-A1 Two-Step Photoresist Compositions and Methods IRRESISTIBLE MATERIALS LTD (GB) 2015-08-27 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 US disclosed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10095112-B2 Multiple trigger photoresist compositions and methods ERCC4, ERCC2, APEX1 NAAA 1296/4885CES1 2793/4885CES2 1971/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.