SCHEMBL503521

SCHEMBL503521

O=C1CCC(=O)N1OS(=O)(=O)c1c(F)c(F)c(F)c(F)c1F

nearest known ligand 0.52

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ PARL Q9H300 2/20 0.52
▸ KMT2A Q03164 2/20 0.35
▸ MEN1 O00255 1/20 0.35
▸ CA1 P00915 4/20 0.33
▸ CA2 P00918 4/20 0.33
▸ CA12 O43570 1/20 0.33
▸ CA7 P43166 1/20 0.33
▸ CA13 Q8N1Q1 1/20 0.33
▸ MMP2 P08253 2/20 0.32
▸ KDM4E B2RXH2 1/20 0.31
▸ ALDH1A1 P00352 1/20 0.31
▸ MAPT P10636 1/20 0.31
▸ HPGD P15428 1/20 0.31
▸ MMP1 P03956 1/20 0.30
▸ MMP9 P14780 1/20 0.30
▸ MMP8 P22894 1/20 0.30
▸ MMP13 P45452 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16990204 0.78 PARL (0.50) PARLKMT2AMEN1CA1CA2
SCHEMBL4829749 0.76 CA1 (0.33) KMT2AMEN1CA1CA2CA12
SCHEMBL4834476 0.76 CA12 (0.34) CA1CA2CA12CA7CA13
SCHEMBL5551755 0.74 KDM4E (0.41) KMT2AMEN1CA1CA2CA12
SCHEMBL452440 0.74 PARL (0.70) PARLKMT2AMEN1MMP2KDM4E
SCHEMBL12339094 0.72 PARL (0.81) PARLKMT2AMEN1CA1CA2
SCHEMBL28411329 0.71 PARL (0.54) PARLCA1CA2CA12MMP2
SCHEMBL16990198 0.71 PARL (0.50) PARLKMT2AMEN1CA1CA2
SCHEMBL65774 0.71 PARL (0.50) PARLKMT2AMEN1CA1CA2
SCHEMBL2898286 0.71 KMT2A (0.66) PARLKMT2AMEN1KDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448474-B2 Positive photosensitive resin composition and pattern forming method CHI MEI CORPORATION (TW) 2016-09-20 — — US disclosed
US-20150160554-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE CHI MEI CORPORATION (TW) 2015-06-11 — — US disclosed
US-8435718-B2 Upper layer-forming composition and photoresist patterning method JSR CORPORATION (JP) 2013-05-07 — — US disclosed
EP-1950610-B1 IMMERSION LITHOGRAPHIC COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR CORP (JP) 2012-05-02 — — EP disclosed
US-20120028198-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2012-02-02 — — US disclosed
EP-1253470-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-06-16 — — EP disclosed
US-20100003615-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2010-01-07 — — US disclosed
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 — — US disclosed
EP-1238972-B1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORP (JP) 2009-12-16 — — EP disclosed
EP-1270553-B1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORP (JP) 2009-11-18 — — EP disclosed
EP-1270553-A2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR Corporation (JP) 2003-01-02 — — EP disclosed
US-20020192593-A1 Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure JSR CORPORATION (JP) 2002-12-19 — — US disclosed
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-21 — — US disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 — — EP disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 — — EP disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 — — EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 — — US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 — — EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 — — US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition ARID2, RAD1, RAD51 PARL 2895/4885KMT2A 443/4885MEN1 2881/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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