Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 2/20 | 0.50 |
| ▸ | GAA | P10253 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 4/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.42 |
| ▸ | XBP1 | P17861 | 2/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.42 |
| ▸ | RAPGEF4 | Q8WZA2 | 6/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.40 |
| ▸ | F2 | P00734 | 2/20 | 0.40 |
| ▸ | VDR | P11473 | 1/20 | 0.38 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | MMP1 | P03956 | 1/20 | 0.38 |
| ▸ | MMP2 | P08253 | 1/20 | 0.38 |
| ▸ | MMP9 | P14780 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11892773 | 0.82 | KDM4E (0.46) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL5556202 | 0.81 | KDM4E (0.50) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL7519092 | 0.81 | MAPT (0.43) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL4835204 | 0.79 | MAPT (0.42) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL4835081 | 0.79 | MAPT (0.39) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL5555746 | 0.76 | GAA (0.39) | GAAMAPTKDM4ENPSR1XBP1 | |
| SCHEMBL2958322 | 0.76 | ALDH1A1 (0.65) | PARLGAAMAPTKDM4EXBP1 | |
| SCHEMBL5557975 | 0.76 | KDM4E (0.73) | MAPTKDM4ENPSR1XBP1CYP1A2 | |
| SCHEMBL29761819 | 0.76 | KDM4E (0.73) | MAPTKDM4ENPSR1XBP1CYP1A2 | |
| SCHEMBL64214 | 0.75 | PARL (0.68) | PARLGAAMAPTKDM4EXBP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 395 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | claimed |
| CN-120044752-A | Photosensitive resin composition | 东京应化工业株式会社 | 2025-05-27 | — | — | CN | disclosed |
| US-20240302743-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-09-12 | — | — | US | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| CN-116583784-A | Resist composition and resist pattern forming method | 东京应化工业株式会社 | 2023-08-11 | — | — | CN | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| WO-2022138648-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2022-06-30 | — | — | WO | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-107949808-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and method for producing same | 三菱瓦斯化学株式会社 | 2021-10-22 | — | — | CN | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-6042988-A | ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-03-28 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5928837-A | Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-07-27 | — | — | US | disclosed |
| EP-0848289-A1 | Negative-working chemical sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-06-17 | — | — | EP | disclosed |