Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 4/20 | 0.47 |
| ▸ | CA2 | P00918 | 4/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.43 |
| ▸ | GAA | P10253 | 1/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.38 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.38 |
| ▸ | ENPP2 | Q13822 | 2/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.37 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.36 |
| ▸ | F2 | P00734 | 1/20 | 0.36 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.36 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.36 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14142598 | 0.91 | CA1 (0.41) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL382670 | 0.90 | ALDH1A1 (0.54) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL6918643 | 0.84 | ENPP3 (0.41) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL7804864 | 0.80 | ALDH1A1 (0.37) | ALDH1A1GAATDP1MEN1KMT2A | |
| SCHEMBL20377380 | 0.78 | ALDH1A1 (0.38) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL6568143 | 0.77 | ALDH1A1 (0.36) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL3863054 | 0.74 | F2 (0.40) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL1551682 | 0.73 | F2 (0.50) | CA1CA2ALDH1A1GAASMN1; SMN2 | |
| SCHEMBL1665251 | 0.73 | CA1 (0.41) | CA1CA2ALDH1A1GAATDP1 | |
| SCHEMBL5472080 | 0.73 | ALDH1A1 (0.36) | ALDH1A1GAATDP1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| EP-3348542-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-07-18 | — | — | EP | disclosed |
| CN-106094440-A | Lower layer film for lithography forms material, lower layer film for lithography and pattern formation method | 三菱瓦斯化学株式会社 | 2016-11-09 | — | — | CN | disclosed |
| CN-104981463-A | Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method | MITSUBISHI GAS CHEMICAL CO | 2015-10-14 | — | — | CN | disclosed |
| CN-104969127-A | Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method | MITSUBISHI GAS CHEMICAL CO | 2015-10-07 | — | — | CN | disclosed |
| US-7358030-B2 | Process for producing ether compound | KYOWA YUKA CO., LTD. (JP) | 2008-04-15 | — | — | US | disclosed |
| US-20060074262-A1 | Process for producing ether compound | KYOWA YUKA CO., LTD. (JP) | 2006-04-06 | — | — | US | disclosed |
| EP-1472576-A2 | SULFONATE DERIVATIVES AND THE USE THEROF AS LATENT ACIDS | Ciba SC Holding AG (CH) | 2004-11-03 | — | — | EP | disclosed |
| WO-2003067332-A2 | SULFONATE DERIVATIVES AND THE USE THEROF AS LATENT ACIDS | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 2003-08-14 | — | — | WO | disclosed |
| EP-1320785-A2 | OXIME DERIVATIVES AND THE USE THEREOF AS LATENT ACIDS | Ciba SC Holding AG (CH) | 2003-06-25 | — | — | EP | disclosed |
| WO-2002025376-A2 | OXIME DERIVATIVES AND THE USE THEREOF AS LATENT ACIDS | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 2002-03-28 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | CA1 131/4885CA2 1077/4885ALDH1A1 1553/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA1 161/4885CA2 1466/4885ALDH1A1 1540/4885 |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C5, C1R | CA1 161/4885CA2 1466/4885ALDH1A1 1540/4885 |
| US-20060074262-A1 | Process for producing ether compound | AGL, ARL1, CYP2C8 | CA1 4504/4885CA2 2210/4885ALDH1A1 1191/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA1 161/4885CA2 1466/4885ALDH1A1 1540/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | CA1 302/4885CA2 1212/4885ALDH1A1 135/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.