SCHEMBL51423

SCHEMBL51423

O=S(=O)(O[I+](c1ccccc1)c1ccccc1)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CA2 P00918 19/20 0.39
CA1 P00915 18/20 0.39
MMP1 P03956 5/20 0.35
MMP2 P08253 5/20 0.35
MMP9 P14780 5/20 0.35
MMP8 P22894 5/20 0.35
MMP13 P45452 5/20 0.35
PIK3CD O00329 1/20 0.33
PIK3CA P42336 1/20 0.33
PIK3CB P42338 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL59304 0.98 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL444424 0.98 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL1805423 0.93 CA1 (0.35) CA2CA1MMP1MMP2MMP9
SCHEMBL3284035 0.91 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL1804139 0.89 GAA (0.35) CA2CA1MMP1MMP2MMP9
SCHEMBL1800748 0.88 CA1 (0.34) CA2CA1PIK3CDPIK3CAPIK3CB
SCHEMBL3982973 0.87 CA2 (0.32) CA2CA1MMP1MMP2MMP9
SCHEMBL3980025 0.85 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL1801411 0.85 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL2895496 0.84 CA2 (0.38) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2002 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN claimed
CN-122011922-A Bottom anti-reflection coating composition and preparation and application thereof 嘉庚创新实验室 2026-05-12 CN claimed
CN-120005123-A Acrylic ester block copolymer resin, photoresist, and preparation method and application thereof 中国石油化工股份有限公司 2025-05-16 CN claimed
CN-113296359-B Bottom layer composition and method for manufacturing semiconductor device 台湾积体电路制造股份有限公司 2025-05-02 CN claimed
CN-119463075-A Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof 微芯新材料(湖州)有限公司 2025-02-18 CN claimed
US-20250021002-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) 2025-01-16 US claimed
US-12187851-B2 Network polymers and methods of making and using same THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE (US) 2025-01-07 US claimed
CN-115368494-B Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof 瑞红(苏州)电子化学品股份有限公司 2024-03-29 CN claimed
WO-2023082371-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF 上海新阳半导体材料股份有限公司 2023-05-19 WO claimed
US-20230119934-A1 NETWORK POLYMERS AND METHODS OF MAKING AND USING SAME UNIV COLORADO REGENTS (US) 2023-04-20 US claimed
WO-2006091523-A2 NORBORNENE-TYPE POLYMERS, COMPOSITIONS THEREOF AND LITHOGRAPHIC PROCESSES USING SUCH COMPOSITIONS PROMERUS LLC (US) 2006-08-31 WO claimed
US-7033728-B2 Photoresist composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-04-25 US claimed
EP-1612603-A2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2006-01-04 EP claimed
US-20050277055-A1 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2005-12-15 US claimed
WO-2005066714-A2 PHOTORESIST COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (DE) 2005-07-21 WO claimed
US-20050147915-A1 Photoresist composition MERCK PATENT GMBH (DE) 2005-07-07 US claimed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US claimed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP claimed
US-6447980-B1 POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2002-09-10 US claimed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 US claimed