Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL51718

O=C1c2ccc3ccccc3c2C(=O)N1O.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.43

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNMT1 P26358 1/20 0.43
ERCC1 P07992 2/20 0.38
FEN1 P39748 2/20 0.38
ERCC4 Q92889 2/20 0.38
MAPT P10636 4/20 0.36
TSHR P16473 3/20 0.36
CES1 P23141 2/20 0.36
CYP1A2 P05177 2/20 0.36
POLB P06746 2/20 0.36
ALOX12 P18054 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
KMT2A Q03164 5/20 0.36
ALDH1A1 P00352 5/20 0.36
MEN1 O00255 4/20 0.36
RAB9A P51151 2/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
PRKCA P17252 1/20 0.35
NSD2 O96028 1/20 0.35
OPRM1 P35372 1/20 0.35
OPRD1 P41143 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL567138 0.87 DNMT1 (0.50) DNMT1ERCC1FEN1ERCC4MAPT
SCHEMBL43564 0.85 DNMT1 (0.49) DNMT1ERCC1FEN1ERCC4MAPT
SCHEMBL65123 0.83 TSHR (0.44) DNMT1ERCC1FEN1ERCC4MAPT
SCHEMBL3144814 0.79 ALDH1A1 (0.48) DNMT1MAPTCYP1A2TDP1KMT2A
Trifluoromethanesulfonic Acid SCHEMBL52114 0.78 ERCC1 (0.46) ERCC1FEN1ERCC4MAPTTSHR
SCHEMBL336529 0.77 DNMT1 (0.45) DNMT1MAPTTSHRCES1CYP1A2
Phenanthrene SCHEMBL28237114 0.77 ALDH1A1 (0.52) MAPTTSHRCYP1A2POLBTDP1
Trifluoromethanesulfonic Acid SCHEMBL6306910 0.76 DNMT1 (0.44) DNMT1MAPTTSHRCES1CYP1A2
Trifluoromethanesulfonic Acid SCHEMBL51719 0.75 ERCC1 (0.71) DNMT1ERCC1FEN1ERCC4MAPT
Trifluoromethanesulfonic Acid SCHEMBL28266656 0.74 DNMT1 (0.41) DNMT1MAPTCES1CYP1A2TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 812 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115981100-B Hydrofluoric acid-resistant protective material for lithography and lithography process thereof 湖南梵鑫新材料股份有限公司 2026-05-12 CN claimed
US-20260008909-A1 RESIN COMPOSITION AND FLOW CELLS INCORPORATING THE SAME ILLUMINA INC (US) 2026-01-08 US claimed
US-20250208517-A1 ACIDIC SPIN-ON CARBON (SOC) LAYER FOR EUV LITHOGRAPHY BREWER SCIENCE, INC. 2025-06-26 US claimed
WO-2025137444-A1 ACIDIC SPIN-ON CARBON (SOC) LAYER FOR EUV LITHOGRAPHY BREWER SCIENCE, INC. (US) 2025-06-26 WO claimed
US-12232338-B2 Low-voltage operation dual-gate organic thin-film transistors and methods of manufacturing thereof CORNING INCORPORATED (US) 2025-02-18 US claimed
CN-119414657-A Fluorine-containing titanium oxide nanoparticle photoresist material, preparation method thereof and application thereof in photoetching technology 山东大学 2025-02-11 CN claimed
CN-119322427-A Photoresist composition and metallization method 杜邦电子材料国际有限责任公司 2025-01-17 CN claimed
US-12187851-B2 Network polymers and methods of making and using same THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE (US) 2025-01-07 US claimed
CN-113671793-B Chemical amplification type positive ultraviolet photoresist and preparation and use methods thereof 徐州博康信息化学品有限公司 2024-12-31 CN claimed
CN-111045296-B UV patternable polymer blend for organic thin film transistor 康宁股份有限公司 2024-12-27 CN claimed
US-20150241783-A1 Methods and Techniques to use with Photosensitized Chemically Amplified Resist Chemicals and Processes TOKYO ELECTRON LIMITED (JP) 2015-08-27 US claimed
US-20150241782-A1 Chemical Amplification Methods and Techniques for Developable Bottom Anti-reflective Coatings and Dyed Implant Resists TOKYO ELECTRON LIMITED (JP) 2015-08-27 US claimed
US-20150234272-A1 METAL OXIDE NANOPARTICLES AND PHOTORESIST COMPOSITIONS INTEL CORPORATION (US) 2015-08-20 US claimed
US-20150160551-A1 POSITIVE-TONE, CHEMICALLY AMPLIFIED, AQUEOUS-DEVELOPABLE, PERMANENT DIELECTRIC GEORGIA TECH RESEARCH CORPORATION (US) 2015-06-11 US claimed
US-20150152328-A1 PHOTOACTIVATED ETCHING PASTE AND ITS USE MERCK PATENT GMBH (DE) 2015-06-04 US claimed
EP-2856519-A1 PHOTOACTIVATED ETCHING PASTE AND ITS USE Merck Patent GmbH (DE) 2015-04-08 EP claimed
US-20150037735-A1 MOLECULAR GLASS PHOTORESISTS CONTAINING BISPHENOL A FRAMEWORK AND METHOD FOR PREPARING THE SAME AND USE THEREOF INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (CN) 2015-02-05 US claimed
WO-2013182265-A1 PHOTOACTIVATED ETCHING PASTE AND ITS USE MERCK PATENT GMBH (DE) 2013-12-12 WO claimed
US-20130264287-A1 GRAFTED MEMBRANES AND SUBSTRATES HAVING SURFACES WITH SWITCHABLE SUPEROLEOPHILICITY AND SUPEROLEOPHOBICITY AND APPLICATIONS THEREOF KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) 2013-10-10 US claimed
US-20120187287-A1 Substrate compositions and methods of use thereof NEXTVAL, INC. 2012-07-26 US claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150037735-A1 MOLECULAR GLASS PHOTORESISTS CONTAINING BISPHENOL A FRAMEWORK AND METHOD FOR PREPARING THE SAME AND USE THEREOF ETV6, ETV1, ESR1 DNMT1 659/4885ERCC1 397/4885FEN1 4059/4885
US-20260008909-A1 RESIN COMPOSITION AND FLOW CELLS INCORPORATING THE SAME CD47, LCP1, DEGS1 DNMT1 707/4885ERCC1 217/4885FEN1 3139/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.