Known targets — ChEMBL curated mechanism
BTKCACNA1CCACNA1DCACNA1FCACNA1SCACNA2D1CACNA2D2DRD2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQHRH1HTR2AP2RY12
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | DNMT1 | P26358 | 1/20 | 0.43 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.39 |
| ▸ | HSP90AB1 | P08238 | 1/20 | 0.39 |
| ▸ | ERCC1 | P07992 | 2/20 | 0.38 |
| ▸ | FEN1 | P39748 | 2/20 | 0.38 |
| ▸ | ERCC4 | Q92889 | 2/20 | 0.38 |
| ▸ | WDR5 | P61964 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 3/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.37 |
| ▸ | GAA | P10253 | 1/20 | 0.37 |
| ▸ | G6PD | P11413 | 1/20 | 0.37 |
| ▸ | CYP1A2 | P05177 | 3/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.36 |
| ▸ | POLB | P06746 | 2/20 | 0.36 |
| ▸ | ALOX12 | P18054 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3144814 | 0.90 | ALDH1A1 (0.48) | SMN1; SMN2DNMT1HSP90AA1MAPTKMT2A | |
| SCHEMBL567138 | 0.87 | DNMT1 (0.50) | TSHRSMN1; SMN2DNMT1ERCC1FEN1 | |
| SCHEMBL43564 | 0.85 | DNMT1 (0.49) | TSHRSMN1; SMN2DNMT1ERCC1FEN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL51718 | 0.83 | DNMT1 (0.43) | TSHRSMN1; SMN2DNMT1ERCC1FEN1 | |
| SCHEMBL64367 | 0.78 | TSHR (0.61) | TSHRSMN1; SMN2ERCC1FEN1ERCC4 | |
| SCHEMBL6761575 | 0.77 | ERCC1 (0.69) | TSHRSMN1; SMN2DNMT1ERCC1FEN1 | |
| SCHEMBL218236 | 0.76 | SMN1; SMN2 (0.46) | TSHRSMN1; SMN2DNMT1HSP90AA1HSP90AB1 | |
| SCHEMBL72297 | 0.72 | ALDH1A1 (0.63) | SMN1; SMN2DNMT1HSP90AA1HSP90AB1MAPT | |
| SCHEMBL6546057 | 0.72 | PRKCA (0.40) | DNMT1ERCC1FEN1ERCC4KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL7134477 | 0.71 | TSHR (0.50) | TSHRSMN1; SMN2ERCC1FEN1ERCC4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 349 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-108693705-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2021-07-13 | — | — | CN | disclosed |
| CN-107848983-B | Compound, resin, material for forming underlayer film for lithography, resist pattern, method for forming circuit pattern, and method for purifying resist pattern | 三菱瓦斯化学株式会社 | 2021-07-09 | — | — | CN | disclosed |
| CN-113039177-A | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2021-06-25 | — | — | CN | disclosed |
| CN-107430344-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2021-03-26 | — | — | CN | disclosed |
| CN-107428646-B | Compounds, resins, and methods for their purification, and uses thereof | 三菱瓦斯化学株式会社 | 2021-03-02 | — | — | CN | disclosed |
| CN-112424283-A | Composition for forming optical member, compound and resin | 三菱瓦斯化学株式会社 | 2021-02-26 | — | — | CN | disclosed |
| CN-112400138-A | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2021-02-23 | — | — | CN | disclosed |
| EP-1132774-A2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-12 | — | — | EP | disclosed |
| US-6284429-B1 | FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-04 | — | — | US | disclosed |
| US-6280898-B1 | PHOTORESISTS PATTERNS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |