SCHEMBL5177256

SCHEMBL5177256

CC(C)(C)OC(=O)COc1[c]cccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PTPN1 P18031 3/20 0.39
▸ MAPT P10636 2/20 0.39
▸ HPGD P15428 2/20 0.39
▸ LMNA P02545 1/20 0.39
▸ POLB P06746 1/20 0.39
▸ CYP2C9 P11712 1/20 0.39
▸ CYP2C19 P33261 1/20 0.39
▸ NPSR1 Q6W5P4 1/20 0.39
▸ PSEN1 P49768 2/20 0.38
▸ PSEN2 P49810 2/20 0.38
▸ APH1B Q8WW43 2/20 0.38
▸ NCSTN Q92542 2/20 0.38
▸ APH1A Q96BI3 2/20 0.38
▸ PSENEN Q9NZ42 2/20 0.38
▸ KDM4E B2RXH2 2/20 0.37
▸ ALDH1A1 P00352 2/20 0.37
▸ DDB1 Q16531 1/20 0.36
▸ CRBN Q96SW2 1/20 0.36
▸ MEN1 O00255 1/20 0.34
▸ TSHR P16473 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21612913 0.87 ALDH1A1 (0.34) PTPN1MAPTHPGDLMNAPOLB
SCHEMBL21612893 0.86 ALDH1A1 (0.35) PTPN1MAPTHPGDLMNAPOLB
SCHEMBL16390959 0.84 HDAC8 (0.36) LMNAKDM4EALDH1A1PTPRC
SCHEMBL2565533 0.82 KMT2A (0.40) MAPTLMNAPOLBKDM4EALDH1A1
SCHEMBL1444265 0.79 ALDH1A1 (0.48) PTPN1MAPTHPGDLMNANPSR1
SCHEMBL7048126 0.79 HSD11B1 (0.35) POLBALDH1A1TSHR
SCHEMBL11850746 0.78 KMT2A (0.39) HPGDPOLBCYP2C9CYP2C19KDM4E
SCHEMBL1387698 0.78 TNFRSF1A (0.34) PTPN1MAPTHPGDLMNAPOLB
SCHEMBL21883674 0.77 PSEN1 (0.46) PTPN1MAPTHPGDLMNAPOLB
SCHEMBL22656552 0.76 POLB (0.50) PTPN1MAPTHPGDLMNAPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5908730-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-06-01 — — US claimed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 — — US claimed
US-5731126-A BLEND OF POLYSILOXANE AND PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-03-24 — — US claimed
EP-1319197-B1 ANTIREFLECTIVE COMPOSITION SHIPLEY CO LLC (US) 2007-06-06 — — EP disclosed
US-7147801-B2 Ink jet ink composition and method for security marking VIDEOJET TECHNOLOGIES INC. (US) 2006-12-12 — — US disclosed
US-6861209-B2 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-03-01 — — US disclosed
US-20040106070-A1 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-06-03 — — US disclosed
WO-2002023274-A9 PHOTORESIST COMPOSITION SHIPLEY CO LLC (US) 2003-11-13 — — WO disclosed
US-6645695-B2 Crosslinked polymeric particles and a photoactive component, wherein the polymeric particles comprise cleavable group(s); free of surfactant; forming relief images SHIPLEY COMPANY, L.L.C. 2003-11-11 — — US disclosed
EP-1319197-A2 ANTIREFLECTIVE COMPOSITION Shipley Company LLC (US) 2003-06-18 — — EP disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 — — US disclosed
WO-2002023274-A2 PHOTORESIST COMPOSITION SHIPLEY COMPANY, L.L.C. (US) 2002-03-21 — — WO disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 — — US disclosed
US-6030746-A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPRISES A ORGANIC SOLVENT, AN ALKALI SOLUBLE RESIN, A PHOTOACID GENERATOR AND A DISSOLUTION RATE REGULATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-02-29 — — US disclosed
US-5945517-A CAPABLE OF GIVING A PATTERNED RESIST LAYER WITH HIGH CONTRAST, HIGH FILM THICKNESS RETENTION, HIGH PATTERN RESOLUTION AND LATENT IMAGE STABILITY TOKYO OHKA KOGYO CO., LTD. (JP) 1999-08-31 — — US disclosed
US-5856561-A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-01-05 — — US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 — — US disclosed
US-5731126-A BLEND OF POLYSILOXANE AND PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-03-24 — — US disclosed
US-5691396-A POLYHYDROXYBENZYLSILSESQUIOXANE SHIN-ETSU CHEMICAL CO., LTD. (JP) 1997-11-25 — — US disclosed
US-5612170-A SILICONE, PHOTO ACID GENERATOR, DISSOLUTION INHIBITOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 1997-03-18 — — US disclosed
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