SCHEMBL525107

SCHEMBL525107

CC1(OC(=O)C2CC3C=CC2C3)CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.42
KDM4E B2RXH2 1/20 0.42
ALDH1A1 P00352 8/20 0.39
HPGD P15428 1/20 0.37
POLB P06746 3/20 0.36
KMT2A Q03164 2/20 0.36
RAB9A P51151 1/20 0.36
CYP19A1 P11511 1/20 0.35
SCN1A P35498 1/20 0.35
SCN2A Q99250 1/20 0.35
SCN3A Q9NY46 1/20 0.35
APEX1 P27695 1/20 0.34
RECQL P46063 1/20 0.34
BLM P54132 1/20 0.34
ESR2 Q92731 1/20 0.34
HSD17B10 Q99714 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
HSD11B1 P28845 2/20 0.34
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22263892 1.00 LMNA (0.42) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL3364588 0.98 KDM4E (0.44) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL30695938 0.87 LMNA (0.33) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL22263690 0.85 ALDH1A1 (0.46) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL7669427 0.84 KDM4E (0.40) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL22264008 0.84 KDM4E (0.33) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL11907844 0.84 ALDH1A1 (0.46) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL2779166 0.82 LMNA (0.41) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL30209958 0.82 KDM4E (0.30) LMNAKDM4EALDH1A1
SCHEMBL22263759 0.82 ALDH1A1 (0.42) LMNAKDM4EALDH1A1HPGDPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 378 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116500858-A Coating of combined photoresist and Si-based hard mask 上海艾深斯科技有限公司 2023-07-28 CN claimed
US-11886119-B2 Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2024-01-30 US disclosed
CN-110709774-B Underlayer film forming material, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2023-12-08 CN disclosed
CN-116500858-A Coating of combined photoresist and Si-based hard mask 上海艾深斯科技有限公司 2023-07-28 CN disclosed
US-20230185195-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2023-06-15 US disclosed
US-11599025-B2 Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2023-03-07 US disclosed
US-11556056-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-17 US disclosed
CN-107207456-B Latent acids and their use 巴斯夫欧洲公司 2021-05-04 CN disclosed
US-10795258-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-10-06 US disclosed
US-10774029-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-15 US disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020006582-A1 Chemical amplification type positive resist compositions and sulfonium salts SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-01-17 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010046641-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-29 US disclosed
US-20010044070-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-22 US disclosed
EP-1154321-A1 Chemical amplification type positive resist compositions and sulfonium salts SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-14 EP disclosed
US-20010033987-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-10-25 US disclosed
EP-1143299-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-10-10 EP disclosed
EP-1128212-A2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-29 EP disclosed
EP-1041442-A1 Chemical amplification type positive resist SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-10-04 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11556056-B2 Salt, acid generator, resist composition and method for producing resist pattern CLIC1, OXSR1, RER1 LMNA 3335/4885KDM4E 2394/4885ALDH1A1 1211/4885
US-10774029-B2 Compound, resin, resist composition and method for producing resist pattern C1R, C9, RER1 LMNA 1369/4885KDM4E 3075/4885ALDH1A1 776/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.