Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 7/20 | 0.52 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.49 |
| ▸ | MEN1 | O00255 | 2/20 | 0.49 |
| ▸ | MAPT | P10636 | 2/20 | 0.49 |
| ▸ | PRKCA | P17252 | 1/20 | 0.47 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.45 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.45 |
| ▸ | LMNA | P02545 | 1/20 | 0.45 |
| ▸ | ATM | Q13315 | 1/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.44 |
| ▸ | XBP1 | P17861 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25776354 | 0.95 | EPHX2 (0.58) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL29135743 | 0.93 | EPHX2 (0.57) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL692776 | 0.90 | NPSR1 (0.63) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL7475995 | 0.89 | NPSR1 (0.53) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL5970292 | 0.89 | EPHX2 (0.53) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL14461586 | 0.85 | EPHX2 (0.49) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL12132675 | 0.85 | ALDH1A1 (0.58) | NPSR1ALDH1A1KMT2AMEN1MAPT | |
| SCHEMBL26147214 | 0.84 | NPSR1 (0.54) | EPHX2NPSR1ALDH1A1KMT2AMEN1 | |
| SCHEMBL7459150 | 0.84 | NPSR1 (0.57) | EPHX2NPSR1ALDH1A1 | |
| SCHEMBL13084353 | 0.83 | NPSR1 (0.60) | EPHX2NPSR1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11131926-B2 | Resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-09-28 | — | — | US | disclosed |
| EP-3343292-B1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-05-06 | — | — | EP | disclosed |
| US-20200133121-A1 | ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-09-17 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| CN-105074894-A | Sealing sheet, method for producing semiconductor device, and substrate provided with sealing sheet | NITTO DENKO CORP | 2015-11-18 | — | — | CN | disclosed |
| WO-2014104400-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-07-03 | — | — | WO | disclosed |
| US-20130177850-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-11 | — | — | US | disclosed |
| US-8460850-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same | FUFIFILM Corporation (JP) | 2013-06-11 | — | — | US | disclosed |
| CN-103131355-A | Under-fill material and method for producing semiconductor device | NITTO DENKO CORP | 2013-06-05 | — | — | CN | disclosed |
| US-20030104312-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-06-05 | — | — | US | disclosed |
| US-6552143-B2 | Addition polymer including units of 1-oxo-perhydro-5,6-didehydro-4,7-methanoisobenzofuran; making a semiconductor using the photoresist; high adhesion, fine patterns | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2003-04-22 | — | — | US | disclosed |
| US-20020169266-A1 | Polymeric compound and resin composition for photoresist | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-6440636-B1 | HIGH ETCHING RESISTANCE, TRANSPARENCY, ALKALI SOLUBILITY, AND ADHESION; ACRYLIC ESTERS HAVING ADAMANTANE GROUP | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-08-27 | — | — | US | disclosed |
| US-20020016516-A1 | Hydrocarbon bonded to a carbon atom which is bonded to a hydroxyl group, a methane group, and an adamantane ring; or its protected derivatives; alcohol intermediates for acrylic ester monomers for hydrophilic, adhesive photoresists | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6344590-B1 | HYDROCARBON BONDED TO A CARBON ATOM WHICH IS BONDED TO A HYDROXYL GROUP, A METHANE GROUP, AND AN ADAMANTANE RING; OR ITS PROTECTED DERIVATIVES; ALCOHOL INTERMEDIATES FOR ACRYLIC ESTER MONOMERS FOR HYDROPHILIC, ADHESIVE PHOTORESISTS | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2002-02-05 | — | — | US | disclosed |
| EP-1172384-A1 | POLYMER FOR PHOTORESISTS AND RESIN COMPOSITIONS FOR PHOTORESISTS | Daicel Chemical Industries, Ltd. (JP) | 2002-01-16 | — | — | EP | disclosed |
| EP-1172694-A1 | POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST | Daicel Chemical Industries, Ltd. (JP) | 2002-01-16 | — | — | EP | disclosed |
| EP-1043298-A1 | PROCESSES FOR THE PREPARATION OF ALCOHOLS | Daicel Chemical Industries, Ltd. (JP) | 2000-10-11 | — | — | EP | disclosed |
| EP-0990632-A1 | ADAMANTANEMETHANOL DERIVATIVES AND PROCESS FOR THE PREPARATION THEREOF | Daicel Chemical Industries, Ltd. (JP) | 2000-04-05 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200133121-A1 | ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SLC6A5, SLC11A2, LARP7 | EPHX2 3787/4885NPSR1 1308/4885ALDH1A1 4692/4885 |
| US-20020016516-A1 | Hydrocarbon bonded to a carbon atom which is bonded to a hydroxyl group, a methane group, and an adamantane ring; or its protected derivatives; alcohol intermediates for acrylic ester monomers for hydrophilic, adhesive photoresists | ADH1A, ADGRF1, ADGRE5 | EPHX2 143/4885NPSR1 1297/4885ALDH1A1 47/4885 |
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | LRRC47, SLIRP, COPE | EPHX2 3292/4885NPSR1 2600/4885ALDH1A1 4701/4885 |
| US-11131926-B2 | Resist composition and resist patterning process | SLC11A2, RER1, GPS1 | EPHX2 3607/4885NPSR1 1956/4885ALDH1A1 3107/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.