SCHEMBL5361602

SCHEMBL5361602

COc1ccc(C(C#N)=NOS(=O)(=O)Cc2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.43
▸ NPC1 O15118 2/20 0.43
▸ RAB9A P51151 2/20 0.43
▸ CYP1A2 P05177 1/20 0.43
▸ CYP3A4 P08684 1/20 0.43
▸ CYP2C19 P33261 1/20 0.43
▸ L3MBTL1 Q9Y468 3/20 0.43
▸ THRB P10828 1/20 0.43
▸ SMN1; SMN2 Q16637 1/20 0.43
▸ TDP1 Q9NUW8 1/20 0.43
▸ MAPT P10636 2/20 0.42
▸ KMT2A Q03164 4/20 0.40
▸ MEN1 O00255 2/20 0.40
▸ HSD11B1 P28845 1/20 0.40
▸ PTGES O14684 1/20 0.40
▸ TAS2R14 Q9NYV8 1/20 0.40
▸ TAS2R8 Q9NYW2 1/20 0.40
▸ CXCR3 P49682 1/20 0.40
▸ RXFP1 Q9HBX9 1/20 0.40
▸ HTT P42858 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30726881 1.00 ALDH1A1 (0.43) ALDH1A1NPC1RAB9ACYP1A2CYP3A4
SCHEMBL30726870 0.88 KMT2A (0.42) ALDH1A1NPC1RAB9ACYP1A2CYP3A4
SCHEMBL1417510 0.88 KMT2A (0.42) ALDH1A1NPC1RAB9ACYP1A2CYP3A4
SCHEMBL36535 0.84 NQO2 (0.40) ALDH1A1RAB9ACYP1A2CYP3A4SMN1; SMN2
SCHEMBL297395 0.84 NQO2 (0.40) ALDH1A1RAB9ACYP1A2CYP3A4SMN1; SMN2
SCHEMBL14839272 0.82 KMT2A (0.38) ALDH1A1NPC1RAB9AL3MBTL1SMN1; SMN2
SCHEMBL12110833 0.82 NQO2 (0.39) ALDH1A1RAB9ACYP1A2CYP3A4SMN1; SMN2
SCHEMBL36510 0.81 HSD11B1 (0.46) ALDH1A1NPC1RAB9AL3MBTL1SMN1; SMN2
SCHEMBL4825418 0.81 RECQL (0.39) ALDH1A1RAB9ACYP1A2CYP3A4SMN1; SMN2
SCHEMBL36511 0.81 HSD11B1 (0.46) ALDH1A1NPC1RAB9AL3MBTL1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946157-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-17 — — US disclosed
US-20160291464-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-10-06 — — US disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 — — US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 — — US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 — — US disclosed
US-6693049-B2 FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-02-17 — — US disclosed
US-20030032280-A1 Method for filling fine hole TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-13 — — US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 — — US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 — — US disclosed
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