SCHEMBL14839272

SCHEMBL14839272

COc1ccc(C(C#N)=NOS(=O)(=O)Cc2ccc(CCC(C)(C)I)cc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 4/20 0.38
▸ MEN1 O00255 3/20 0.38
▸ MAPT P10636 3/20 0.35
▸ RAB9A P51151 4/20 0.34
▸ SMN1; SMN2 Q16637 2/20 0.34
▸ CALM1 P0DP23 1/20 0.33
▸ TMEM97 Q5BJF2 1/20 0.33
▸ MMP13 P45452 2/20 0.33
▸ MMP8 P22894 1/20 0.33
▸ MMP12 P39900 1/20 0.33
▸ DPP4 P27487 1/20 0.33
▸ MMP1 P03956 1/20 0.32
▸ NPC1 O15118 3/20 0.32
▸ PKM P14618 1/20 0.32
▸ CA12 O43570 1/20 0.32
▸ CA1 P00915 1/20 0.32
▸ CA2 P00918 1/20 0.32
▸ CA5A P35218 1/20 0.32
▸ CA9 Q16790 1/20 0.32
▸ CA14 Q9ULX7 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5361602 0.82 ALDH1A1 (0.43) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL30726881 0.82 ALDH1A1 (0.43) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL297395 0.77 NQO2 (0.40) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL36535 0.77 NQO2 (0.40) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL14839201 0.77 RAB9A (0.35) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL12110833 0.75 NQO2 (0.39) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL4825418 0.74 RECQL (0.39) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL4825409 0.74 RECQL (0.39) KMT2AMEN1MAPTRAB9ASMN1; SMN2
SCHEMBL296645 0.73 NQO2 (0.43) MAPTRAB9ASMN1; SMN2NPC1PKM
SCHEMBL36568 0.73 NQO2 (0.43) MAPTRAB9ASMN1; SMN2NPC1PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2013047396-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 — — WO disclosed
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