Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 4/20 | 0.62 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.41 |
| ▸ | VDR | P11473 | 2/20 | 0.41 |
| ▸ | MEN1 | O00255 | 2/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 6/20 | 0.40 |
| ▸ | HPGD | P15428 | 5/20 | 0.40 |
| ▸ | MAPT | P10636 | 4/20 | 0.40 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | F2 | P00734 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | CA12 | O43570 | 2/20 | 0.34 |
| ▸ | CA1 | P00915 | 2/20 | 0.34 |
| ▸ | CA2 | P00918 | 2/20 | 0.34 |
| ▸ | CA9 | Q16790 | 2/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12339094 | 0.86 | PARL (0.81) | PARLKMT2AVDRMEN1ALDH1A1 | |
| SCHEMBL5361542 | 0.83 | TDP1 (0.46) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL4829685 | 0.82 | TDP1 (0.44) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL4835211 | 0.81 | TDP1 (0.41) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL5371274 | 0.80 | KDM4E (0.69) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL29761885 | 0.80 | KDM4E (0.69) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL14382806 | 0.79 | ALDH1A1 (0.40) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL14382078 | 0.79 | MAPT (0.39) | PARLTDP1KMT2AVDRMEN1 | |
| SCHEMBL452440 | 0.79 | PARL (0.70) | PARLKMT2AVDRMEN1ALDH1A1 | |
| SCHEMBL64214 | 0.77 | PARL (0.68) | PARLKMT2AVDRMEN1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6042988-A | ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-03-28 | — | — | US | claimed |
| US-20240302743-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-09-12 | — | — | US | disclosed |
| US-11760865-B2 | Halogen-free sulphonic acid ester and/or sulphinic acid ester as flame retardant, flame retardant synergists and radical generators in plastics | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) | 2023-09-19 | — | — | US | disclosed |
| US-11760865-B2 | Halogen-free sulphonic acid ester and/or sulphinic acid ester as flame retardant, flame retardant synergists and radical generators in plastics | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) | 2023-09-19 | — | — | US | disclosed |
| CN-116583784-A | Resist composition and resist pattern forming method | 东京应化工业株式会社 | 2023-08-11 | — | — | CN | disclosed |
| WO-2022138648-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2022-06-30 | — | — | WO | disclosed |
| US-20200231783-A1 | HALOGEN-FREE SULPHONIC ACID ESTER AND/OR SULPHINIC ACID ESTER AS FLAME RETARDANT, FLAME RETARDANT SYNERGISTS AND RADICAL GENERATORS IN PLASTICS | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. (DE) | 2020-07-23 | — | — | US | disclosed |
| US-7179399-B2 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-6835530-B2 | Base material for lithography | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-12-28 | — | — | US | disclosed |
| US-20040121260-A1 | Base material for lithography | TOKYO OHKA KOGYO CO., LTD. | 2004-06-24 | — | — | US | disclosed |
| US-6693049-B2 | FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-6689535-B2 | A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM | TOKYO OHKA KOGYO CO., LTD (JP) | 2004-02-10 | — | — | US | disclosed |
| US-20030032280-A1 | Method for filling fine hole | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| US-20020182360-A1 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020055064-A1 | Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-09 | — | — | US | disclosed |
| EP-0848289-B1 | Negative-working chemical sensitization photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2002-02-27 | — | — | EP | disclosed |
| US-6042988-A | ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-03-28 | — | — | US | disclosed |
| US-5928837-A | Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-07-27 | — | — | US | disclosed |
| EP-0848289-A1 | Negative-working chemical sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-06-17 | — | — | EP | disclosed |