SCHEMBL64214

SCHEMBL64214

Cc1ccc(S(=O)(=O)ON2C(=O)CCC2=O)cc1

nearest known ligand 0.68

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PARL Q9H300 2/20 0.68
VDR P11473 2/20 0.65
ALDH1A1 P00352 6/20 0.55
KDM4E B2RXH2 5/20 0.55
HPGD P15428 2/20 0.55
MMP2 P08253 1/20 0.49
KMT2A Q03164 5/20 0.47
MEN1 O00255 2/20 0.47
MAPT P10636 5/20 0.47
F2 P00734 3/20 0.46
GAA P10253 2/20 0.45
CYP1A2 P05177 1/20 0.45
CYP2D6 P10635 1/20 0.45
RECQL P46063 1/20 0.42
XBP1 P17861 1/20 0.42
HTT P42858 1/20 0.42
PKM P14618 1/20 0.42
LMNA P02545 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22251878 0.93 VDR (0.61) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL12339094 0.90 PARL (0.81) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL5566879 0.89 VDR (0.85) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL452440 0.83 PARL (0.70) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL65074 0.82 GAA (0.66) PARLVDRALDH1A1KDM4EMMP2
SCHEMBL3224346 0.82 PARL (0.49) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL5552236 0.82 VDR (0.65) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL5552231 0.81 VDR (0.65) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL8490590 0.81 PARL (0.68) PARLVDRALDH1A1KDM4EHPGD
SCHEMBL1607770 0.81 PARL (0.68) PARLVDRALDH1A1KDM4EHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7258962-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2007-08-21 US claimed
US-20050244747-A1 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-03 US claimed
US-20040253547-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-12-16 US claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
US-20260077385-A1 FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD CANON KABUSHIKI KAISHA (JP) 2026-03-19 US disclosed
US-20260042932-A1 COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD CANON KK (JP) 2026-02-12 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
US-12449731-B2 Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product ISR CORPORATION (JP) 2025-10-21 US disclosed
CN-120077771-A Curable composition for organic EL element, cured product for organic EL element, method for producing cured product for organic EL element, and polymer JSR株式会社 2025-05-30 CN disclosed
CN-119937243-A Chemically amplified positive photosensitive resin composition, cured film, and element having cured film 奇美实业股份有限公司 2025-05-06 CN disclosed
WO-2025075091-A1 ADHESIVE COMPOSITION, ADHESIVE SHEET, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT DEVICE 日東電工株式会社 2025-04-10 WO disclosed
US-5856561-A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-01-05 US disclosed
EP-0843220-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-05-20 EP disclosed
EP-0831371-A2 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1998-03-25 EP disclosed
US-5679495-A TERPOLYMER PHOTORESIST CONTAINING VINYLPHENOL DERIVATIVE, TERT-BUTYL (METH)ACRYLATE, AND A UNIT TO REDUCE ALKALINE SOLUBILITY; DRY ETCH RESISTANCE JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-10-21 US disclosed
EP-0793144-A2 Radiation sensitive composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-09-03 EP disclosed
EP-0660187-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1997-03-05 EP disclosed
US-5556734-A RESISTS JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-09-17 US disclosed
EP-0660187-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-06-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260077385-A1 FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD EEF1D, RHOA, YWHAH PARL 235/4885VDR 4609/4885ALDH1A1 4238/4885
US-20260042932-A1 COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD SMCHD1, PIM1, PIM2 PARL 121/4885VDR 4609/4885ALDH1A1 4758/4885
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 PARL 1432/4885VDR 4124/4885ALDH1A1 841/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.