Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 10/20 | 1.00 |
| ▸ | MAPT | P10636 | 9/20 | 1.00 |
| ▸ | ALDH1A1 | P00352 | 9/20 | 1.00 |
| ▸ | KMT2A | Q03164 | 8/20 | 1.00 |
| ▸ | HPGD | P15428 | 7/20 | 1.00 |
| ▸ | MEN1 | O00255 | 5/20 | 0.77 |
| ▸ | VDR | P11473 | 3/20 | 0.77 |
| ▸ | HTT | P42858 | 3/20 | 0.76 |
| ▸ | F2 | P00734 | 4/20 | 0.69 |
| ▸ | PARL | Q9H300 | 2/20 | 0.65 |
| ▸ | POLB | P06746 | 1/20 | 0.61 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.61 |
| ▸ | LMNA | P02545 | 2/20 | 0.57 |
| ▸ | XBP1 | P17861 | 2/20 | 0.57 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.57 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.57 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.57 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.57 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.57 |
| ▸ | THRB | P10828 | 1/20 | 0.56 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64277 | 0.87 | VDR (1.00) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL2468373 | 0.87 | KMT2A (1.00) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL29370293 | 0.87 | VDR (1.00) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL1088835 | 0.87 | ALDH1A1 (1.00) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL31218469 | 0.87 | ALDH1A1 (1.00) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL22251608 | 0.86 | KDM4E (0.75) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL22251611 | 0.86 | KDM4E (0.75) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL7886651 | 0.86 | KDM4E (0.75) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL8488334 | 0.86 | KDM4E (0.75) | KDM4EMAPTALDH1A1KMT2AHPGD | |
| SCHEMBL8778106 | 0.86 | KDM4E (0.76) | KDM4EMAPTALDH1A1KMT2AHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 675 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0118543-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIVERSITY OF SOUTHERN CALIFORNIA (US) | 1984-09-19 | — | — | EP | claimed |
| WO-1984000888-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIV SOUTHERN CALIFORNIA (US) | 1984-03-15 | — | — | WO | claimed |
| US-4425424-A | LEUCO DYE AND N-SULFONYLOXY PHOTOOXIDANT | EASTMAN KODAK COMPANY (US) | 1984-01-10 | — | — | US | claimed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| CN-120044752-A | Photosensitive resin composition | 东京应化工业株式会社 | 2025-05-27 | — | — | CN | disclosed |
| US-20240302743-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-09-12 | — | — | US | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-3266759-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| US-20230202221-A1 | THERMAL TRANSFER SHEET, DISCOLORED OR DECOLORIZED PRINTED MATERIAL, AND METHOD FOR PRODUCING DISCOLORED OR DECOLORIZED PRINTED MATERIAL | DAI NIPPON PRINTING CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| EP-0058638-B1 | CURABLE COMPOSITIONS CONTAINING AN ACID-CURABLE RESIN, AND PROCESS FOR CURING THEM | CIBA-GEIGY AG (CH) | 1985-08-28 | — | — | EP | disclosed |
| EP-0118543-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIVERSITY OF SOUTHERN CALIFORNIA (US) | 1984-09-19 | — | — | EP | disclosed |
| EP-0118543-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIVERSITY OF SOUTHERN CALIFORNIA (US) | 1984-09-19 | — | — | EP | disclosed |
| US-4439517-A | Process for the formation of images with epoxide resin | CIBA-GEIGY CORPORATION (US) | 1984-03-27 | — | — | US | disclosed |
| WO-1984000888-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIV SOUTHERN CALIFORNIA (US) | 1984-03-15 | — | — | WO | disclosed |
| WO-1984000888-A1 | SUBSTITUTED N-BENZENESULFONYLOXYPHTHALIMIDES | UNIV SOUTHERN CALIFORNIA (US) | 1984-03-15 | — | — | WO | disclosed |
| US-4425424-A | LEUCO DYE AND N-SULFONYLOXY PHOTOOXIDANT | EASTMAN KODAK COMPANY (US) | 1984-01-10 | — | — | US | disclosed |
| EP-0085024-A2 | Method for producing images in photoresist layers | CIBA-GEIGY AG (CH) | 1983-08-03 | — | — | EP | disclosed |
| EP-0058638-A2 | Curable compositions containing an acid-curable resin, and process for curing them | CIBA-GEIGY AG (CH) | 1982-08-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | KDM4E 402/4885MAPT 4120/4885ALDH1A1 841/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | KDM4E 821/4885MAPT 3986/4885ALDH1A1 1540/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.