SCHEMBL29370293

SCHEMBL29370293

Cc1ccc(S(=O)(=O)ON2C(=O)c3ccccc3C2=O)cc1

nearest known ligand 1.00 ✓ in ChEMBL — recovers established targets

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
VDR P11473 3/20 1.00
KDM4E B2RXH2 10/20 0.78
ALDH1A1 P00352 10/20 0.78
HPGD P15428 7/20 0.78
MAPT P10636 9/20 0.77
KMT2A Q03164 9/20 0.77
MEN1 O00255 6/20 0.76
F2 P00734 4/20 0.72
HTT P42858 3/20 0.66
XBP1 P17861 2/20 0.66
LMNA P02545 2/20 0.60
CYP1A2 P05177 1/20 0.60
CYP3A4 P08684 1/20 0.60
CYP2C19 P33261 1/20 0.60
NPSR1 Q6W5P4 1/20 0.60
SMN1; SMN2 Q16637 1/20 0.60
THRB P10828 1/20 0.56
PARL Q9H300 2/20 0.50
POLB P06746 1/20 0.50
L3MBTL1 Q9Y468 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL64277 1.00 VDR (1.00) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL5566879 0.92 VDR (0.85) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL462047 0.88 ALDH1A1 (1.00) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL64368 0.87 KDM4E (1.00) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL5556208 0.87 VDR (0.77) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL14099607 0.87 VDR (0.76) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL2468373 0.86 KMT2A (1.00) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL27718683 0.86 VDR (0.75) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL5369841 0.85 VDR (0.74) VDRKDM4EALDH1A1HPGDMAPT
SCHEMBL8778106 0.85 KDM4E (0.76) VDRKDM4EALDH1A1HPGDMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-20250068070-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATIVE FILM, SURFACE-PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-27 US disclosed
CN-111198480-B Photosensitive resin composition, pattern forming method and antireflection film 信越化学工业株式会社 2025-02-11 CN disclosed
EP-4502729-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATIVE FILM, SURFACE-PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-05 EP disclosed
US-12203019-B2 Nanoparticle having dissociable protective group, nanoparticle layer patterning method and related application Beijing Boe Technology Development Co., Ltd. (CN) 2025-01-21 US disclosed
CN-114341215-B Curable composition 株式会社日本触媒 2024-12-27 CN disclosed
CN-119179233-A Photosensitive composition, method for producing pattern, cured product, and electronic component 江苏艾森半导体材料股份有限公司 2024-12-24 CN disclosed
CN-112534353-B Photosensitive resin composition, method for forming resist pattern, method for producing plated molded article, and semiconductor device JSR株式会社 2024-12-24 CN disclosed
CN-109976091-B Photosensitive resin composition, pattern forming method, and manufacture of optoelectronic semiconductor device 信越化学工业株式会社 2024-09-27 CN disclosed
US-20240182783-A1 QUANTUM DOTS MATERIAL SOLUTION, METHOD OF FORMING QUANTUM DOTS LAYER, AND ARRAY SUBSTRATE, DISPLAY PANEL, AND METHOD OF FABRICATING DISPLAY PANEL Beijing Boe Technology Development Co., Ltd. (CN) 2024-06-06 US disclosed
CN-114975098-A Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board 佳能株式会社 2022-08-30 CN disclosed
CN-108732831-B Resin composition, substrate and element comprising same, and method for producing same JSR株式会社 2022-08-16 CN disclosed
CN-114746809-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element 信越化学工业株式会社 2022-07-12 CN disclosed
CN-107251193-B Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board 佳能株式会社 2022-06-21 CN disclosed
US-20220169922-A1 NANOPARTICLE, NANOPARTICLE LAYER PATTERNING METHOD AND RELATED APPLICATION Beijing Boe Technology Development Co., Ltd. 2022-06-02 US disclosed
CN-114460809-A Negative photosensitive resin composition, cured film, display device provided with cured film, and method for producing same 东丽株式会社 2022-05-10 CN disclosed
CN-109422881-B Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method 信越化学工业株式会社 2022-04-19 CN disclosed
CN-114341215-A Curable composition 株式会社日本触媒 2022-04-12 CN disclosed
CN-108885399-B Negative photosensitive resin composition, cured film, display device provided with cured film, and method for producing same 东丽株式会社 2022-03-15 CN disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed