SCHEMBL5369874

SCHEMBL5369874

N#CC(=NOS(=O)(=O)c1ccc2ccccc2c1)c1ccccc1

nearest known ligand 0.54

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 1/20 0.54
▸ LMNA P02545 2/20 0.54
▸ KDM4E B2RXH2 2/20 0.50
▸ ALDH1A1 P00352 1/20 0.50
▸ KAT6A Q92794 6/20 0.42
▸ F2 P00734 3/20 0.40
▸ PRSS1 P07477 3/20 0.40
▸ PRSS2 P07478 3/20 0.40
▸ PRSS3 P35030 3/20 0.40
▸ PLA2G7 Q13093 1/20 0.38
▸ CTSS P25774 1/20 0.38
▸ AKR1C3 P42330 1/20 0.37
▸ L3MBTL1 Q9Y468 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6743182 1.00 MAPT (0.54) MAPTLMNAKDM4EALDH1A1KAT6A
SCHEMBL29761892 1.00 MAPT (0.54) MAPTLMNAKDM4EALDH1A1KAT6A
SCHEMBL5372313 0.89 MAPT (0.49) MAPTLMNAKDM4EALDH1A1KAT6A
SCHEMBL30529835 0.89 MAPT (0.49) MAPTLMNAKDM4EALDH1A1KAT6A
SCHEMBL6738877 0.89 MAPT (0.49) MAPTLMNAKDM4EALDH1A1KAT6A
SCHEMBL7976575 0.84 KDM4E (0.49) MAPTLMNAKDM4EALDH1A1PLA2G7
SCHEMBL92016 0.84 KDM4E (0.49) MAPTLMNAKDM4EALDH1A1PLA2G7
SCHEMBL10673694 0.82 KDM4E (0.42) MAPTLMNAKDM4EALDH1A1PLA2G7
SCHEMBL10673690 0.82 KDM4E (0.42) MAPTLMNAKDM4EALDH1A1PLA2G7
SCHEMBL10083957 0.82 MAPT (0.49) MAPTLMNAKDM4EALDH1A1PLA2G7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6245930-B1 AN OXIMESULFONATE COMPOUND CAPABLE OF GIVING POSITIVELY OR NEGATIVELY PATTERNED RESIST LAYER OF EXCELLENT PATTERN RESOLUTION, CROSS SECTIOANL PROFILE, AND HIGH SENSITIVITY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-06-12 — — US claimed
US-5976760-A Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-11-02 — — US claimed
CN-116583784-A Resist composition and resist pattern forming method 东京应化工业株式会社 2023-08-11 — — CN disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 — — CN disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 — — US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 — — US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 — — US disclosed
US-6693049-B2 FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-02-17 — — US disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 — — US disclosed
US-20030032280-A1 Method for filling fine hole TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-13 — — US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 — — US disclosed
EP-0821274-B1 Chemical-sensitization resist composition TOKYO OHKA KOGYO CO LTD (JP) 2001-11-14 — — EP disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 — — US disclosed
US-6245930-B1 AN OXIMESULFONATE COMPOUND CAPABLE OF GIVING POSITIVELY OR NEGATIVELY PATTERNED RESIST LAYER OF EXCELLENT PATTERN RESOLUTION, CROSS SECTIOANL PROFILE, AND HIGH SENSITIVITY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-06-12 — — US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 — — US disclosed
US-5976760-A Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-11-02 — — US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 — — US disclosed
US-5817444-A POLYHYDROXYSTYRENE SUBSTITUTED WITH TETRAHYDROPYRAN GROUPS, POLYHYDROXYSTYRENE SUBSTITUTED WITH ALKOXYALKYL GROUPS TOKYO OHKA KOGYO CO., LTD. (JP) 1998-10-06 — — US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 — — EP disclosed
EP-0821274-A1 Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-01-28 — — EP disclosed
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