SCHEMBL5372313

SCHEMBL5372313

COc1ccc(C(C#N)=NOS(=O)(=O)c2ccc3ccccc3c2)cc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 1/20 0.49
▸ LMNA P02545 3/20 0.49
▸ HTT P42858 2/20 0.49
▸ SMN1; SMN2 Q16637 2/20 0.49
▸ TDP1 Q9NUW8 1/20 0.49
▸ L3MBTL1 Q9Y468 1/20 0.49
▸ ALDH1A1 P00352 3/20 0.46
▸ KDM4E B2RXH2 2/20 0.46
▸ NPC1 O15118 3/20 0.43
▸ RAB9A P51151 3/20 0.43
▸ KAT6A Q92794 1/20 0.42
▸ KMT2A Q03164 2/20 0.41
▸ CASP3 P42574 2/20 0.41
▸ SENP7 Q9BQF6 2/20 0.41
▸ SENP8 Q96LD8 1/20 0.41
▸ SENP6 Q9GZR1 1/20 0.41
▸ TUBB4A P04350 1/20 0.41
▸ TUBB P07437 1/20 0.41
▸ TUBA3C P0DPH7 1/20 0.41
▸ TUBA1B P68363 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30529835 1.00 MAPT (0.49) MAPTLMNAHTTSMN1; SMN2TDP1
SCHEMBL6738877 1.00 MAPT (0.49) MAPTLMNAHTTSMN1; SMN2TDP1
SCHEMBL5369874 0.89 MAPT (0.54) MAPTLMNAL3MBTL1ALDH1A1KDM4E
SCHEMBL29761892 0.89 MAPT (0.54) MAPTLMNAL3MBTL1ALDH1A1KDM4E
SCHEMBL6743182 0.89 MAPT (0.54) MAPTLMNAL3MBTL1ALDH1A1KDM4E
SCHEMBL5918260 0.88 EP300 (0.45) MAPTTDP1ALDH1A1KDM4EF2
SCHEMBL5918261 0.88 EP300 (0.45) MAPTTDP1ALDH1A1KDM4EF2
SCHEMBL36510 0.87 HSD11B1 (0.46) MAPTLMNAHTTSMN1; SMN2L3MBTL1
SCHEMBL36511 0.87 HSD11B1 (0.46) MAPTLMNAHTTSMN1; SMN2L3MBTL1
SCHEMBL1470654 0.83 ALDH1A1 (0.49) MAPTLMNAHTTTDP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6245930-B1 AN OXIMESULFONATE COMPOUND CAPABLE OF GIVING POSITIVELY OR NEGATIVELY PATTERNED RESIST LAYER OF EXCELLENT PATTERN RESOLUTION, CROSS SECTIOANL PROFILE, AND HIGH SENSITIVITY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-06-12 — — US claimed
US-5976760-A Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-11-02 — — US claimed
CN-116583784-A Resist composition and resist pattern forming method 东京应化工业株式会社 2023-08-11 — — CN disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 — — CN disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 — — US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 — — US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 — — US disclosed
US-6693049-B2 FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-02-17 — — US disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 — — US disclosed
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 — — US disclosed
US-20030032280-A1 Method for filling fine hole TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-13 — — US disclosed
EP-0821274-B1 Chemical-sensitization resist composition TOKYO OHKA KOGYO CO LTD (JP) 2001-11-14 — — EP disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 — — US disclosed
US-6245930-B1 AN OXIMESULFONATE COMPOUND CAPABLE OF GIVING POSITIVELY OR NEGATIVELY PATTERNED RESIST LAYER OF EXCELLENT PATTERN RESOLUTION, CROSS SECTIOANL PROFILE, AND HIGH SENSITIVITY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-06-12 — — US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 — — US disclosed
US-5976760-A Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-11-02 — — US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 — — US disclosed
US-5817444-A POLYHYDROXYSTYRENE SUBSTITUTED WITH TETRAHYDROPYRAN GROUPS, POLYHYDROXYSTYRENE SUBSTITUTED WITH ALKOXYALKYL GROUPS TOKYO OHKA KOGYO CO., LTD. (JP) 1998-10-06 — — US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 — — EP disclosed
EP-0821274-A1 Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-01-28 — — EP disclosed
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