SCHEMBL5370076

SCHEMBL5370076

CC(C)S(=O)(=O)ON1C(=O)C=CC1=O

nearest known ligand 0.33

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 3/20 0.33
GSK3A P49840 1/20 0.33
GSK3B P49841 1/20 0.33
GMNN O75496 1/20 0.30
ALDH1A1 P00352 1/20 0.30
LMNA P02545 1/20 0.30
MAPT P10636 1/20 0.30
THPO P40225 1/20 0.30
BLM P54132 1/20 0.30
PMP22 Q01453 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6809828 0.83 GSK3A (0.31) MGLLGSK3AGSK3B
SCHEMBL63146 0.75 MGLL (0.38) MGLLGSK3AGSK3BGMNNALDH1A1
SCHEMBL63449 0.74 PARL (0.46)
SCHEMBL4829729 0.74
SCHEMBL5370317 0.72 KDM4E (0.56) GMNNALDH1A1LMNAMAPTTHPO
SCHEMBL63994 0.71 MGLL (0.41) MGLLGSK3AGSK3BGMNNALDH1A1
SCHEMBL4832043 0.69
SCHEMBL4826566 0.68 ALDH1A1 (0.34) ALDH1A1
SCHEMBL12735283 0.67 MGLL (0.39) MGLLGSK3AGSK3BGMNNALDH1A1
SCHEMBL2383424 0.65 MGLL (0.30) MGLL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120044752-A Photosensitive resin composition 东京应化工业株式会社 2025-05-27 CN disclosed
US-20240302743-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-12 US disclosed
CN-116583784-A Resist composition and resist pattern forming method 东京应化工业株式会社 2023-08-11 CN disclosed
WO-2022138648-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-06-30 WO disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 CN disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 US disclosed
US-6693049-B2 FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-02-17 US disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 US disclosed
US-20030032280-A1 Method for filling fine hole TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-13 US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
EP-0848289-B1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-02-27 EP disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed