SCHEMBL5404820

SCHEMBL5404820

CC(C)(C)c1ccc([S+](c2ccccc2)c2ccccc2)cc1.O=[N+]([O-])c1cccc(S(=O)(=O)[O-])c1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.48
GAA P10253 1/20 0.48
HTT P42858 1/20 0.48
CA2 P00918 2/20 0.46
CA5A P35218 1/20 0.46
MEN1 O00255 2/20 0.44
LMNA P02545 2/20 0.44
ALDH1A1 P00352 2/20 0.44
NPC1 O15118 1/20 0.44
MAPT P10636 1/20 0.44
NFKB1 P19838 1/20 0.44
RAB9A P51151 1/20 0.44
NFKB2 Q00653 1/20 0.44
RELA Q04206 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
CA1 P00915 1/20 0.43
MMP1 P03956 1/20 0.43
MMP2 P08253 1/20 0.43
MMP9 P14780 1/20 0.43
MMP8 P22894 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5409057 0.90 HSD11B1 (0.39) KMT2AGAAHTTCA2CA5A
SCHEMBL5398330 0.88 KMT2A (0.60) KMT2AGAAHTTCA2CA5A
SCHEMBL5412237 0.86 KMT2A (0.51) KMT2AGAAHTTCA2CA5A
SCHEMBL451538 0.83 ALDH1A1 (0.46) GAAHTTCA2LMNAALDH1A1
SCHEMBL5408366 0.82 KMT2A (0.50) KMT2AGAAHTTCA2CA5A
SCHEMBL5445839 0.81 ALDH1A1 (0.47) GAAHTTCA2LMNAALDH1A1
SCHEMBL5415242 0.81 CA1 (0.43) KMT2AGAAHTTCA2MEN1
SCHEMBL5408950 0.79 KMT2A (0.46) KMT2AGAAHTTCA2CA5A
SCHEMBL5410023 0.78 KMT2A (0.48) KMT2AGAAHTTCA2CA5A
SCHEMBL5404325 0.77 KMT2A (0.46) KMT2AGAAHTTCA2CA5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed