SCHEMBL5408950

SCHEMBL5408950

Cc1ccc([S+](c2ccccc2)c2ccccc2)c(C)c1.O=[N+]([O-])c1cccc(S(=O)(=O)[O-])c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.46
GAA P10253 1/20 0.46
HTT P42858 1/20 0.46
ACHE P22303 2/20 0.44
TSHR P16473 1/20 0.44
CA2 P00918 2/20 0.44
CA5A P35218 1/20 0.44
MAPT P10636 2/20 0.43
KDM4E B2RXH2 1/20 0.43
ALDH1A1 P00352 1/20 0.43
CA1 P00915 1/20 0.41
MMP1 P03956 1/20 0.41
MMP2 P08253 1/20 0.41
MMP9 P14780 1/20 0.41
MMP8 P22894 1/20 0.41
MMP13 P45452 1/20 0.41
MEN1 O00255 2/20 0.40
CYP1A2 P05177 1/20 0.40
CYP3A4 P08684 1/20 0.40
CYP2C19 P33261 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408836 0.91 TSHR (0.37) KMT2AGAAHTTACHETSHR
SCHEMBL5412237 0.87 KMT2A (0.51) KMT2AGAAHTTACHETSHR
SCHEMBL5410023 0.86 KMT2A (0.48) KMT2AGAAHTTACHETSHR
SCHEMBL5398330 0.84 KMT2A (0.60) KMT2AGAAHTTACHETSHR
SCHEMBL4861374 0.82 RAPGEF4 (0.40) KMT2AGAAHTTACHECA2
SCHEMBL5403808 0.80 FFAR4 (0.43) KMT2AGAAHTTCA2MAPT
SCHEMBL5404820 0.79 KMT2A (0.48) KMT2AGAAHTTACHECA2
SCHEMBL3206004 0.78 FFAR4 (0.41) KMT2AGAATSHRMEN1LMNA
SCHEMBL5404846 0.76 ACHE (0.42) KMT2AGAAHTTACHETSHR
SCHEMBL5408529 0.76 TSHR (0.39) KMT2AGAAHTTACHETSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed