SCHEMBL5408231

SCHEMBL5408231

CO[SiH](OC)C(c1ccccc1)([SiH](OC)OC)[SiH](OC)OC

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.42
KCNN4 O15554 5/20 0.40
ALDH1A1 P00352 3/20 0.39
ALOX15 P16050 1/20 0.39
CES1 P23141 1/20 0.36
TSHR P16473 2/20 0.36
CA4 P22748 1/20 0.36
TAAR1 Q96RJ0 1/20 0.34
ESR1 P03372 2/20 0.33
ESR2 Q92731 2/20 0.33
CYP3A4 P08684 1/20 0.33
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8322042 0.80 MAPK1 (0.42) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL28716149 0.78 MAPK1 (0.46) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL3107619 0.78 MAPK1 (0.46) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL20658041 0.76 MAPK1 (0.39) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL27884335 0.75 MAPK1 (0.43) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL20658075 0.73 KCNN4 (0.38) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL27317212 0.73 CYP2D6 (0.37) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL20658081 0.67 MAPK1 (0.44) MAPK1KCNN4ALDH1A1ALOX15CES1
SCHEMBL6323709 0.65 KIF11 (0.40) MAPK1KCNN4ALDH1A1ALOX15TAAR1
SCHEMBL21112841 0.65 CA4 (0.42) MAPK1ALDH1A1ALOX15TSHRCA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed