SCHEMBL5408797

SCHEMBL5408797

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccccc1)c1cc(Cl)c(Cl)cc1Cl

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PGR P06401 2/20 0.43
GUSB P08236 1/20 0.42
TDP1 Q9NUW8 2/20 0.39
ALDH1A1 P00352 3/20 0.36
HSD17B10 Q99714 1/20 0.36
HSD11B1 P28845 1/20 0.36
ALPL P05186 1/20 0.35
ALPI P09923 1/20 0.35
HTR6 P50406 1/20 0.34
LMNA P02545 1/20 0.34
MAPT P10636 1/20 0.34
HTT P42858 1/20 0.34
ABCC9 O60706 1/20 0.34
ABCC8 Q09428 1/20 0.34
KCNJ11 Q14654 1/20 0.34
KCNJ8 Q15842 1/20 0.34
CA12 O43570 3/20 0.34
CA1 P00915 3/20 0.34
CA2 P00918 3/20 0.34
CA3 P07451 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5401615 0.91 ALDH1A1 (0.39) PGRGUSBTDP1ALDH1A1ALPL
SCHEMBL5400315 0.89 HSD11B1 (0.48) PGRALDH1A1HSD11B1CA1CA2
SCHEMBL5398449 0.84 FFAR4 (0.39) PGRALDH1A1HSD17B10ALPLALPI
SCHEMBL561670 0.83 KDM4E (0.48) TDP1ALDH1A1L3MBTL1
SCHEMBL5410051 0.83 ALDH1A1 (0.40) PGRALDH1A1HSD17B10HSD11B1ALPL
SCHEMBL5408753 0.76 KDM4E (0.45) PGRTDP1ALDH1A1ALPLALPI
SCHEMBL3159089 0.76 KDM4E (0.45) PGRTDP1ALDH1A1ALPLALPI
SCHEMBL9474330 0.76 HTR6 (0.52) PGRGUSBTDP1ALDH1A1HSD17B10
SCHEMBL137133 0.75 HTR6 (0.48) TDP1ALDH1A1HSD17B10HTR6MAPT
SCHEMBL5403701 0.74 HSD11B1 (0.49) HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed