SCHEMBL5415413

SCHEMBL5415413

COc1cccc([SiH2]c2ccc([SiH](c3ccc([SiH2]c4cccc(OC)c4OC)cc3)c3ccc([SiH2]c4cccc(OC)c4OC)cc3)cc2)c1OC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.37
NFE2L2 Q16236 5/20 0.36
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA4 P22748 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
CA14 Q9ULX7 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CYP1A1 P04798 2/20 0.32
CYP1A2 P05177 2/20 0.32
CYP1B1 Q16678 2/20 0.32
PRMT1 Q99873 1/20 0.32
CYP19A1 P11511 1/20 0.32
KDM4E B2RXH2 3/20 0.32
MAPT P10636 2/20 0.32
HSD17B10 Q99714 2/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706593 0.90 SMN1; SMN2 (0.44) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL28634374 0.83 NFE2L2 (0.45) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL23000914 0.81 ALDH1A1 (0.42) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5415668 0.81 NFE2L2 (0.38) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5420856 0.81 NFE2L2 (0.39) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5419772 0.81 SMN1; SMN2 (0.37) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5408282 0.81 NFE2L2 (0.38) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5410049 0.78 NFE2L2 (0.37) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5416843 0.77 NFE2L2 (0.36) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5420931 0.72 NFE2L2 (0.37) SMN1; SMN2NFE2L2CYP1A1CYP1A2CYP1B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed