Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | NFE2L2 | Q16236 | 5/20 | 0.42 |
| ▸ | CA12 | O43570 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.41 |
| ▸ | CA4 | P22748 | 1/20 | 0.41 |
| ▸ | CA7 | P43166 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 1/20 | 0.41 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 1/20 | 0.38 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.38 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28634374 | 0.92 | NFE2L2 (0.45) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5415413 | 0.90 | SMN1; SMN2 (0.37) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5415668 | 0.90 | NFE2L2 (0.38) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5408282 | 0.90 | NFE2L2 (0.38) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5419772 | 0.90 | SMN1; SMN2 (0.37) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL23000914 | 0.90 | ALDH1A1 (0.42) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5420856 | 0.90 | NFE2L2 (0.39) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5410049 | 0.87 | NFE2L2 (0.37) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5416843 | 0.86 | NFE2L2 (0.36) | SMN1; SMN2NFE2L2CA12CA1CA2 | |
| SCHEMBL5420931 | 0.80 | NFE2L2 (0.37) | SMN1; SMN2NFE2L2MAPK1KDM4EMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4408906-B1 | METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES | WACKER CHEMIE AG (DE) | 2025-05-28 | — | — | EP | disclosed |
| EP-4384392-B1 | METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES | WACKER CHEMIE AG (DE) | 2025-03-19 | — | — | EP | disclosed |
| US-20240392072-A1 | METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES | WACKER CHEMIE AG (DE) | 2024-11-28 | — | — | US | disclosed |
| EP-4408906-A1 | METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES | Wacker Chemie AG (DE) | 2024-08-07 | — | — | EP | disclosed |
| EP-4384392-A1 | METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES | Wacker Chemie AG (DE) | 2024-06-19 | — | — | EP | disclosed |
| WO-2023051912-A1 | METHOD FOR PREPARING LOW-SILANOL POLYORGANOSILOXANES | WACKER CHEMIE AG (DE) | 2023-04-06 | — | — | WO | disclosed |
| WO-2023016649-A1 | METAL-PLATED LAMINATES CONTAINING POLYORGANOSILOXANES | WACKER CHEMIE AG (DE) | 2023-02-16 | — | — | WO | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |