SCHEMBL5419652

SCHEMBL5419652

COc1cccc([SiH2]CC([SiH3])(C[SiH2]c2cccc(OC)c2OC)C[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.42
MAPK1 P28482 2/20 0.38
NFE2L2 Q16236 6/20 0.36
CYP1A1 P04798 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP1B1 Q16678 1/20 0.36
CA12 O43570 2/20 0.34
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA14 Q9ULX7 2/20 0.34
CA4 P22748 1/20 0.34
CA7 P43166 1/20 0.34
CA9 Q16790 1/20 0.34
TSHR P16473 2/20 0.33
POLB P06746 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
ABCB1 P08183 1/20 0.33
ABCG2 Q9UNQ0 1/20 0.33
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5406992 0.86 SMN1; SMN2 (0.44) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL5423963 0.85 SMN1; SMN2 (0.43) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL5417339 0.84 SMN1; SMN2 (0.40) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL5410147 0.84 SMN1; SMN2 (0.40) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL5412463 0.81 SMN1; SMN2 (0.41) SMN1; SMN2MAPK1NFE2L2CYP1A2CA12
SCHEMBL645536 0.80 SMN1; SMN2 (0.48) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL702408 0.80 SMN1; SMN2 (0.48) SMN1; SMN2MAPK1NFE2L2CA12CA1
SCHEMBL5412598 0.80 SMN1; SMN2 (0.40) SMN1; SMN2MAPK1NFE2L2CYP1A2CA12
SCHEMBL5408275 0.80 NFE2L2 (0.39) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5404758 0.79 SMN1; SMN2 (0.39) SMN1; SMN2MAPK1NFE2L2CYP1A2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed