SCHEMBL5440940

SCHEMBL5440940

CC(C)(C)OC(=O)COC(=O)C12CC3CC(C1)C(C(=O)OC(C)(C)C)C(C3)C2

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 9/20 0.41
KMT2A Q03164 3/20 0.41
NPSR1 Q6W5P4 2/20 0.41
MAPT P10636 2/20 0.41
MEN1 O00255 2/20 0.41
HSD11B1 P28845 1/20 0.37
MAPK1 P28482 1/20 0.36
PRKCA P17252 1/20 0.35
CYP17A1 P05093 1/20 0.34
CYP19A1 P11511 1/20 0.34
EPHX2 P34913 1/20 0.34
LMNA P02545 1/20 0.34
RECQL P46063 1/20 0.34
KDM4E B2RXH2 1/20 0.34
DGAT1 O75907 1/20 0.34
ATM Q13315 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5437873 0.90 CYP17A1 (0.37) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL135702 0.86 ALDH1A1 (0.53) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL5437290 0.85 CYP17A1 (0.43) ALDH1A1KMT2AMAPTMEN1HSD11B1
SCHEMBL953836 0.78 ALDH1A1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL5434102 0.78 EPHX2 (0.38) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL5442806 0.76 NPSR1 (0.49) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL7744513 0.74 EPHX2 (0.37) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL5432492 0.72 MEN1 (0.32) ALDH1A1KMT2AMEN1
SCHEMBL5428779 0.72 EPHX2 (0.37) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL17830224 0.70 ALDH1A1 (0.48) ALDH1A1KMT2ANPSR1MAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070254247-A1 Radiation-sensitive resin composition YAMAMOTO MASAFUMI 2007-11-01 US disclosed
US-7005230-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-02-28 US disclosed
US-6800419-B2 FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20040146802-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-29 US disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed