Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.49 |
| ▸ | SMN1; SMN2 | Q16637 | 9/20 | 0.48 |
| ▸ | HSD17B10 | Q99714 | 9/20 | 0.48 |
| ▸ | TP53 | P04637 | 7/20 | 0.48 |
| ▸ | TSHR | P16473 | 7/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 5/20 | 0.48 |
| ▸ | CYP3A4 | P08684 | 5/20 | 0.48 |
| ▸ | CYP2D6 | P10635 | 5/20 | 0.48 |
| ▸ | KDM4E | B2RXH2 | 5/20 | 0.48 |
| ▸ | LMNA | P02545 | 4/20 | 0.48 |
| ▸ | USP2 | O75604 | 2/20 | 0.48 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.48 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.48 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.48 |
| ▸ | RAB9A | P51151 | 6/20 | 0.47 |
| ▸ | NPC1 | O15118 | 5/20 | 0.47 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.47 |
| ▸ | HPGD | P15428 | 2/20 | 0.45 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29353355 | 0.84 | ALDH1A1 (0.47) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL649415 | 0.84 | ALDH1A1 (0.47) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL23066466 | 0.82 | ALDH1A1 (0.61) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL29657689 | 0.81 | IDO1 (0.43) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL1044764 | 0.81 | IDO1 (0.43) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL11405229 | 0.74 | ALDH1A1 (0.52) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL3678540 | 0.74 | HSP90AA1 (0.58) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL10645528 | 0.73 | ADORA3 (0.52) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL10345022 | 0.73 | HSD17B10 (0.54) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR | |
| SCHEMBL10646200 | 0.73 | HSP90AA1 (0.59) | ALDH1A1SMN1; SMN2HSD17B10TP53TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180212026-A1 | SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2018-07-26 | — | — | US | disclosed |
| US-8158338-B2 | Resist sensitizer | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-04-17 | — | — | US | disclosed |
| US-8110339-B2 | Multi-tone resist compositions | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-02-07 | — | — | US | disclosed |
| WO-2010005428-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2010-01-14 | — | — | WO | disclosed |
| US-20100009289-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2010-01-14 | — | — | US | disclosed |
| WO-2009032890-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2009-03-12 | — | — | WO | disclosed |
| US-20090068589-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2009-03-12 | — | — | US | disclosed |
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | disclosed |
| US-20060078820-A1 | Resist with reduced line edge roughness | MASS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2006-04-13 | — | — | US | disclosed |
| US-6936398-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2005-08-30 | — | — | US | disclosed |
| US-20030099897-A1 | Surface modified encapsulated inorganic resist | MASS INSTITUTE OF TECHNOLOGY (MIT) | 2003-05-29 | — | — | US | disclosed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | disclosed |
| EP-1257880-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-20 | — | — | EP | disclosed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| US-6468712-B1 | PHOTOLITHOGRAPHY AT VERY SHORT ULTRAVIOLET WAVELENGTHS EMPLOYING A PHOTO-ACID GENERATOR AND AN ALIPHATIC POLYMER THAT INCLUDES ONE OR MORE PROTECTED HYDROXYL GROUPS; FLUORIDE EXCIMER LASERS; ENHANCED RESOLUTION | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2002-10-22 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |
| WO-2002031598-A2 | RESIST METHODS AND MATERIALS FOR UV AND ELECTRON-BEAM LITHOGRAPHY WITH REDUCED OUTGASSING | MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) | 2002-04-18 | — | — | WO | disclosed |
| WO-2001063360-A2 | ENCAPSULATED INORGANIC RESISTS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) | 2001-08-30 | — | — | WO | disclosed |
| WO-2001063362-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2001-08-30 | — | — | WO | disclosed |