Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES1 | P23141 | 2/20 | 0.34 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.33 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.33 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.33 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.33 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.33 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.33 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.33 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.33 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.33 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.33 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 2/20 | 0.32 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | CA4 | P22748 | 1/20 | 0.32 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.32 |
| ▸ | PDK1 | Q15118 | 2/20 | 0.31 |
| ▸ | PDK2 | Q15119 | 2/20 | 0.31 |
| ▸ | PDK3 | Q15120 | 2/20 | 0.31 |
| ▸ | PDK4 | Q16654 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29745841 | 1.00 | CES1 (0.34) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL1573975 | 0.95 | THRB (0.39) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL29746113 | 0.95 | THRB (0.39) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4962460 | 0.93 | THRB (0.42) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4962900 | 0.93 | THRB (0.42) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4962404 | 0.93 | THRB (0.42) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4962222 | 0.93 | THRB (0.42) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4962904 | 0.91 | HDAC1 (0.40) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL6656488 | 0.89 | MAPK1 (0.37) | CES1HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL4964687 | 0.89 | CES1 (0.39) | CES1HDAC3HDAC4HDAC1HDAC7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113200858-A | Synthesis based on triptycene derivative monomolecular resin, positive photoresist and application of positive photoresist in photoetching | 中国科学院理化技术研究所 | 2021-08-03 | — | — | CN | claimed |
| EP-1314725-B1 | SULFONIUM SALT COMPOUND | WAKO PURE CHEM IND LTD (JP) | 2008-03-19 | — | — | EP | claimed |
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | claimed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | claimed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | claimed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| US-20180212026-A1 | SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2018-07-26 | — | — | US | disclosed |
| US-8158338-B2 | Resist sensitizer | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-04-17 | — | — | US | disclosed |
| US-8110339-B2 | Multi-tone resist compositions | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-02-07 | — | — | US | disclosed |
| WO-2010005428-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2010-01-14 | — | — | WO | disclosed |
| US-20100009289-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2010-01-14 | — | — | US | disclosed |
| US-20090068589-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2009-03-12 | — | — | US | disclosed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | disclosed |
| EP-1257880-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-20 | — | — | EP | disclosed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| US-6468712-B1 | PHOTOLITHOGRAPHY AT VERY SHORT ULTRAVIOLET WAVELENGTHS EMPLOYING A PHOTO-ACID GENERATOR AND AN ALIPHATIC POLYMER THAT INCLUDES ONE OR MORE PROTECTED HYDROXYL GROUPS; FLUORIDE EXCIMER LASERS; ENHANCED RESOLUTION | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2002-10-22 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |
| WO-2001063362-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2001-08-30 | — | — | WO | disclosed |
| WO-2001063360-A2 | ENCAPSULATED INORGANIC RESISTS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) | 2001-08-30 | — | — | WO | disclosed |