Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.38 |
| ▸ | NR1H2 | P55055 | 4/20 | 0.38 |
| ▸ | CA1 | P00915 | 2/20 | 0.38 |
| ▸ | CA2 | P00918 | 2/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | POLB | P06746 | 2/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.37 |
| ▸ | HTT | P42858 | 2/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
| ▸ | ABCC9 | O60706 | 1/20 | 0.36 |
| ▸ | ABCC8 | Q09428 | 1/20 | 0.36 |
| ▸ | KCNJ11 | Q14654 | 1/20 | 0.36 |
| ▸ | KCNJ8 | Q15842 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1573977 | 0.95 | CA1 (0.43) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4962907 | 0.93 | CA1 (0.45) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4964420 | 0.93 | CA1 (0.45) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4962467 | 0.93 | CA1 (0.45) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4962506 | 0.93 | CA1 (0.45) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4964033 | 0.91 | HDAC1 (0.39) | HSD11B1CA1CA2GAAL3MBTL1 | |
| SCHEMBL6656491 | 0.89 | HSD11B1 (0.40) | HSD11B1NR1H2GAAL3MBTL1TSHR | |
| SCHEMBL4967080 | 0.89 | HSD11B1 (0.39) | HSD11B1GAAL3MBTL1TSHRPOLB | |
| SCHEMBL4965786 | 0.85 | CA2 (0.42) | HSD11B1NR1H2CA1CA2GAA | |
| SCHEMBL4961881 | 0.85 | CA2 (0.42) | HSD11B1NR1H2CA1CA2GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113200858-A | Synthesis based on triptycene derivative monomolecular resin, positive photoresist and application of positive photoresist in photoetching | 中国科学院理化技术研究所 | 2021-08-03 | — | — | CN | claimed |
| US-9772558-B2 | Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-09-26 | — | — | US | claimed |
| EP-3049868-A1 | SULFONIC ACID ESTER CONTAINING POLYMERS FOR ORGANIC SOLVENT BASED DUAL-TONE PHOTORESISTS | International Business Machines Corporation (US) | 2016-08-03 | — | — | EP | claimed |
| US-20150086925-A1 | SULFONIC ACID ESTER CONTAINING POLYMERS FOR ORGANIC SOLVENT BASED DUAL-TONE PHOTORESISTS | JSR CORPORATION (JP) | 2015-03-26 | — | — | US | claimed |
| US-8900802-B2 | Positive tone organic solvent developed chemically amplified resist | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-12-02 | — | — | US | claimed |
| US-20140242526-A1 | POSITIVE TONE ORGANIC SOLVENT DEVELOPED CHEMICALLY AMPLIFIED RESIST | JSR CORPORATION (JP) | 2014-08-28 | — | — | US | claimed |
| EP-1314725-B1 | SULFONIUM SALT COMPOUND | WAKO PURE CHEM IND LTD (JP) | 2008-03-19 | — | — | EP | claimed |
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | claimed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | claimed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | claimed |
| EP-3049868-B1 | METHOD FOR ORGANIC SOLVENT BASED DUAL-TONE DEVELOPMENT USING SULFONIC ACID ESTER CONTAINING PHOTORESISTS | IBM (US) | 2019-09-11 | — | — | EP | disclosed |
| US-20180212026-A1 | SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2018-07-26 | — | — | US | disclosed |
| US-9772558-B2 | Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-09-26 | — | — | US | disclosed |
| EP-3049868-A1 | SULFONIC ACID ESTER CONTAINING POLYMERS FOR ORGANIC SOLVENT BASED DUAL-TONE PHOTORESISTS | International Business Machines Corporation (US) | 2016-08-03 | — | — | EP | disclosed |
| US-20150086925-A1 | SULFONIC ACID ESTER CONTAINING POLYMERS FOR ORGANIC SOLVENT BASED DUAL-TONE PHOTORESISTS | JSR CORPORATION (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| US-6468712-B1 | PHOTOLITHOGRAPHY AT VERY SHORT ULTRAVIOLET WAVELENGTHS EMPLOYING A PHOTO-ACID GENERATOR AND AN ALIPHATIC POLYMER THAT INCLUDES ONE OR MORE PROTECTED HYDROXYL GROUPS; FLUORIDE EXCIMER LASERS; ENHANCED RESOLUTION | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2002-10-22 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |
| WO-2001063362-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2001-08-30 | — | — | WO | disclosed |
| WO-2001063360-A2 | ENCAPSULATED INORGANIC RESISTS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) | 2001-08-30 | — | — | WO | disclosed |