SCHEMBL5460685

SCHEMBL5460685

O=C(OCCC1CCCCC1)c1cc([N+](=O)[O-])c(S(=O)(=O)O)c([N+](=O)[O-])c1

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
THRB P10828 9/20 0.46
PAX8 Q06710 1/20 0.42
MAPT P10636 3/20 0.42
PPARG P37231 2/20 0.42
KMT2A Q03164 2/20 0.42
POLB P06746 2/20 0.42
MEN1 O00255 1/20 0.42
LMNA P02545 1/20 0.42
HTT P42858 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42
ESR1 P03372 1/20 0.41
VDR P11473 1/20 0.41
HPGD P15428 3/20 0.38
ALDH1A1 P00352 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5461904 0.99 THRB (0.45) THRBPAX8MAPTPPARGKMT2A
SCHEMBL5461899 0.90 THRB (0.45) THRBPAX8MAPTPPARGKMT2A
SCHEMBL14543738 0.85 THRB (0.57) THRBPAX8MAPTPPARGKMT2A
SCHEMBL10087750 0.84 ESR1 (0.46) THRBPAX8MAPTPPARGKMT2A
SCHEMBL5454047 0.84 KMT2A (0.47) THRBPAX8MAPTPPARGKMT2A
SCHEMBL6395603 0.82 SCN9A (0.36) THRB
SCHEMBL12203453 0.81 THRB (0.42) THRBPAX8MAPTPPARGKMT2A
SCHEMBL14543741 0.81 ESR1 (0.39) KMT2AMEN1L3MBTL1ESR1
SCHEMBL14543740 0.81 SCN9A (0.40) KMT2AL3MBTL1ESR1HPGDALDH1A1
SCHEMBL12229202 0.81 THRB (0.41) THRBPAX8MAPTPPARGKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8927194-B2 Chemical amplified photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-01-06 US disclosed
US-8343708-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2013-01-01 US disclosed
US-20120034564-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-20070088131-A1 Sulfonate and resist composition TOISHI KOUJI 2007-04-19 US disclosed
US-20070088131-A1 Sulfonate and resist composition TOISHI KOUJI 2007-04-19 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-7175963-B2 Chemical amplification type positive resist composition and a resin therefor SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-13 US disclosed
US-6951706-B2 Sulfonate and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-10-04 US disclosed
US-20040152009-A1 Sulfonate and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED 2004-08-05 US disclosed