Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACHE known ✓ | P22303 | 5/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.50 |
| ▸ | LMNA | P02545 | 1/20 | 0.48 |
| ▸ | TYR | P14679 | 1/20 | 0.48 |
| ▸ | KIF11 | P52732 | 3/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.39 |
| ▸ | HPGD | P15428 | 2/20 | 0.38 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.38 |
| ▸ | SLC22A2 | O15244 | 1/20 | 0.38 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.38 |
| ▸ | SLC22A3 | O75751 | 1/20 | 0.38 |
| ▸ | BCHE | P06276 | 5/20 | 0.37 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL59269 | 0.97 | TSHR (0.52) | TSHRLMNATYRKIF11ALDH1A1 | |
| Iodide SCHEMBL5454283 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Ethane SCHEMBL2569932 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Ethane SCHEMBL2437505 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Water SCHEMBL3751214 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Methane SCHEMBL2439409 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Bromide SCHEMBL482554 | 0.94 | TSHR (0.50) | TSHRLMNATYRKIF11ALDH1A1 | |
| Hydrochloric Acid SCHEMBL3748986 | 0.91 | TSHR (0.42) | TSHRLMNATYRKIF11ALDH1A1 | |
| SCHEMBL31289643 | 0.90 | TSHR (0.46) | TSHRLMNATYRKIF11ALDH1A1 | |
| SCHEMBL2436199 | 0.90 | TSHR (0.46) | TSHRLMNATYRKIF11ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12240804-B2 | Onium salt, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-03-04 | — | — | US | disclosed |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-28 | — | — | US | disclosed |
| US-10120278-B2 | Carboxylic acid onium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-11-06 | — | — | US | disclosed |
| US-20170315442-A1 | NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-02 | — | — | US | disclosed |
| US-8110336-B2 | Resin and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8071270-B2 | Polyhydric compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-12-06 | — | — | US | disclosed |
| US-7833693-B2 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | AZ ELECTRONIC MATERIALS USA CORP. | 2010-11-16 | — | — | US | disclosed |
| US-20100075257-A1 | Resin and Chemically Amplified Resist Composition Comprising the Same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-25 | — | — | US | disclosed |
| US-7611822-B2 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-11-03 | — | — | US | disclosed |
| US-20090220886-A1 | POLYHYDRIC COMPOUND AND CHEMICALLY AMPLIFIED RESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-09-03 | — | — | US | disclosed |
| WO-2007007175-A2 | PHOTOACTIVE COMPOUNDS | AZ ELECTRONIC MATERIAL USA CORP. (DE) | 2007-01-18 | — | — | WO | disclosed |
| EP-1077391-B1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2006-09-27 | — | — | EP | disclosed |
| US-20050233245-A1 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-20 | — | — | US | disclosed |
| US-6692893-B2 | ONIUM SALTS OF ARYLSULFONYLOXYNAPHTHALENESULFONATE ANIONS WITH IODONIUM OR SULFONIUM CATIONS; USE IN DEEP ULTRAVIOLET LITHOGRAPHY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-6551758-B2 | For use in microfabrication of integrated circuits | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2003-04-22 | — | — | US | disclosed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | disclosed |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-0848288-A1 | Resist materials | LUCENT TECHNOLOGIES INC. (US) | 1998-06-17 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12240804-B2 | Onium salt, chemically amplified resist composition and patterning process | CACNA1F, SLC6A5, IDUA | ACHE 4696/4885TSHR 4292/4885LMNA 942/4885 |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | CACNA1F, SLC6A5, IDUA | ACHE 4696/4885TSHR 4292/4885LMNA 942/4885 |
| US-10120278-B2 | Carboxylic acid onium salt, chemically amplified resist composition, and pattern forming process | ETV6, ELOVL5, ALAD | ACHE 4795/4885TSHR 3408/4885LMNA 2369/4885 |
| US-20090220886-A1 | POLYHYDRIC COMPOUND AND CHEMICALLY AMPLIFIED RESIST COMPOSITION CONTAINING THE SAME | C5, C1R, H1-4 | ACHE 4585/4885TSHR 2718/4885LMNA 1670/4885 |
| US-20170315442-A1 | NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | ETV6, ELOVL5, ALAD | ACHE 4814/4885TSHR 3464/4885LMNA 2251/4885 |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | ABL1, PI4K2B, FES | ACHE 4804/4885TSHR 1859/4885LMNA 2199/4885 |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | PNN, PI4K2B, PI4K2A | ACHE 4800/4885TSHR 1787/4885LMNA 1536/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.