SCHEMBL546733

SCHEMBL546733

CCC1(O[C]=O)C2CC3CC(C2)CC1C3

nearest known ligand 0.43

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL546846 0.77
SCHEMBL546623 0.74 CYP17A1 (0.32)
SCHEMBL19929344 0.73 HSD11B1 (0.31) HSD11B1
SCHEMBL1186733 0.71 HSD11B1 (0.31) HSD11B1
SCHEMBL13870787 0.70
SCHEMBL439938 0.69 HSD11B1 (0.34) HSD11B1
SCHEMBL25509620 0.69 HSD11B1 (0.38) HSD11B1
SCHEMBL4903157 0.68
SCHEMBL13679161 0.68
SCHEMBL13998868 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8475999-B2 Compound and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-02 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8110336-B2 Resin and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-07 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20100151380-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-17 US disclosed
US-20100136481-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-03 US disclosed
US-20100124719-A1 Polymer and Resist Composition Comprising the Same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-05-20 US disclosed
US-20100075257-A1 Resin and Chemically Amplified Resist Composition Comprising the Same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-03-25 US disclosed
US-7470499-B2 Alicyclic unsaturated compound, polymer, chemically amplified resist composition and method for forming pattern using said composition NEC CORPORATION (JP) 2008-12-30 US disclosed
US-20050014095-A1 Sulfonate and a resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-01-20 US disclosed
US-20040265732-A1 Unsaturated monomers, polymers, chemically amplified resist composition, and process of pattern formation NEC CORPORATION (JP) 2004-12-30 US disclosed
US-6800419-B2 FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6710188-B2 VINYL COPOLYMER HAVING 3-OXO-4-OXABICYCLO(3.2.1)OCTANE-2-YL GROUP NEC CORPORATION (JP) 2004-03-23 US disclosed
US-20030224297-A1 Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer NEC CORPORATION 2003-12-04 US disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-6639084-B2 Comprises vinyl polymer having 3-oxo-4-oxabicyclo(3.2.1) octane-2-yl group; sensitive to far-ultraviolet light; imaging; for use with semiconductor wafers; improved resistance against dry etching and adhesion to substrates NEC CORPORATION (JP) 2003-10-28 US disclosed
US-20030097008-A1 Chemical amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer NEC CORPORATION 2003-05-22 US disclosed
US-6410748-B1 Alicycli c group-containing monomer KABUSHIKI KAISHA TOSHIBA (JP) 2002-06-25 US disclosed
US-6291129-B1 LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS KABUSHIKI KAISHA TOSHIBA (JP) 2001-09-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030097008-A1 Chemical amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer LIG1, OXGR1, ITGA1 HSD11B1 2866/4885
US-20030224297-A1 Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer LIG1, LIG4, OXGR1 HSD11B1 2731/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 HSD11B1 1229/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.