SCHEMBL546846

SCHEMBL546846

C=CCC1(O[C]=O)C2CC3CC(C2)CC1C3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL546733 0.77 HSD11B1 (0.32)
Lithium SCHEMBL5514098 0.77
SCHEMBL16566214 0.76
SCHEMBL14877443 0.74 HSD11B1 (0.31)
SCHEMBL1077901 0.72 HSD11B1 (0.30)
SCHEMBL1350530 0.71
SCHEMBL719297 0.70
SCHEMBL1079039 0.69 ALDH1A1 (0.32)
SCHEMBL6553000 0.69
SCHEMBL4789782 0.67 NPSR1 (0.40)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6737215-B2 Photoresist composition for deep ultraviolet lithography CLARIANT FINANCE (BVI) LTD (VG) 2004-05-18 US claimed
EP-1392745-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS Clariant Finance (BVI) Limited (VG) 2004-03-03 EP claimed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP claimed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US claimed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US claimed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US claimed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
WO-2002092651-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
US-8288077-B2 Chemically amplified resist composition and salt employed therein SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-16 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8110336-B2 Resin and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-07 US disclosed
US-7981985-B2 Polymer and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-19 US disclosed
US-20110091818-A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-04-21 US disclosed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP disclosed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US disclosed
US-20030148211-A1 Sulfonium salt and use thereof SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-08-07 US disclosed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US disclosed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US disclosed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO disclosed