Indene

Indene

SCHEMBL546792

C1=Cc2ccccc2C1.C=Cc1ccccc1O

nearest known ligand 0.39

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 1/20 0.39
CYP2C19 P33261 1/20 0.39
CA2 P00918 8/20 0.38
CA1 P00915 2/20 0.38
TRIM24 O15164 1/20 0.36
TRIM33 Q9UPN9 1/20 0.36
CA12 O43570 6/20 0.36
KDM4E B2RXH2 1/20 0.36
MIF P14174 2/20 0.35
CA9 Q16790 5/20 0.34
TRPA1 O75762 1/20 0.33
CDK4 P11802 1/20 0.33
CCND1 P24385 1/20 0.33
SIRT2 Q8IXJ6 1/20 0.33
PARP1 P09874 1/20 0.33
JUN P05412 1/20 0.33
NFKB1 P19838 1/20 0.33
NFE2L2 Q16236 1/20 0.33
ALDH1A1 P00352 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Indene SCHEMBL15048613 0.89 CYP2C19 (0.39) CYP2D6CYP2C19CA2CA1TRPA1
Indene SCHEMBL29183448 0.88 CA1 (0.43) CYP2D6CYP2C19CA2CA1PARP1
Indene SCHEMBL1972484 0.88 MAPT (0.35) CYP2D6CYP2C19CA2CA1NFE2L2
Indene SCHEMBL15048570 0.85 RELA (0.40) CYP2D6CYP2C19KDM4ETRPA1NFKB1
Indene SCHEMBL6053428 0.82 ELANE (0.39) CYP2D6CYP2C19KDM4E
Indene SCHEMBL6834259 0.81 CYP2D6 (0.36) CYP2D6CYP2C19KDM4E
Indene SCHEMBL6053432 0.81 MAPT (0.39) CYP2D6CYP2C19KDM4EALDH1A1
Indene SCHEMBL6321226 0.81 CYP2D6 (0.36) CYP2D6CYP2C19KDM4ECDK4CCND1
Indene SCHEMBL357035 0.81 CYP2D6 (0.39) CYP2D6CYP2C19CA2CA1PARP1
Indene SCHEMBL2568213 0.80 KDM4E (0.32) CYP2D6CYP2C19KDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8110335-B2 Resist patterning process and manufacturing photo mask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-07 US disclosed
EP-1783551-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-04-14 EP disclosed
US-20100009271-A1 Resist patterning process and manufacturing photo mask SHIN-ETSU CHEMICAL CO., LTD (JP) 2010-01-14 US disclosed
US-7618763-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-17 US disclosed
US-7501223-B2 Polymer, resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-10 US disclosed
US-20080090179-A1 Novel polymer, resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed
US-20070105042-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-10 US disclosed
EP-1783551-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2007-05-09 EP disclosed
US-20060166133-A1 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-27 US disclosed
US-6861198-B2 Negative resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-01 US disclosed
US-20040023151-A1 Negative resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2004-02-05 US disclosed