SCHEMBL547672

SCHEMBL547672

CC(C)(O)c1ccc(C(=O)c2ccccc2)cc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.58
SRD5A2 P31213 3/20 0.57
ELANE P08246 4/20 0.53
RAB9A P51151 3/20 0.52
NPC1 O15118 2/20 0.52
HPGD P15428 2/20 0.52
MEN1 O00255 3/20 0.50
KMT2A Q03164 3/20 0.50
ABCC9 O60706 2/20 0.50
ABCC8 Q09428 2/20 0.50
KCNJ11 Q14654 2/20 0.50
PDK1 Q15118 2/20 0.50
PDK2 Q15119 2/20 0.50
PDK3 Q15120 2/20 0.50
KCNJ8 Q15842 2/20 0.50
PDK4 Q16654 2/20 0.50
L3MBTL1 Q9Y468 2/20 0.50
ATM Q13315 1/20 0.50
TDP1 Q9NUW8 1/20 0.50
ABCB11 O95342 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547765 0.91 SRD5A2 (0.59) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL677046 0.85 ALDH1A1 (0.61) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL11420172 0.85 ALDH1A1 (0.61) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL195282 0.85 SRD5A2 (0.77) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL547647 0.85 SRD5A2 (0.54) SRD5A2ABCC9ABCC8KCNJ11PDK1
Benzophenone SCHEMBL28321860 0.84 ALDH1A1 (0.74) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL547601 0.84 ALDH1A1 (0.54) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL548283 0.82 L3MBTL1 (0.61) ALDH1A1SRD5A2HPGDPDK1PDK2
SCHEMBL677755 0.82 ALDH1A1 (0.56) ALDH1A1SRD5A2ELANERAB9ANPC1
SCHEMBL677086 0.82 ALDH1A1 (0.56) ALDH1A1SRD5A2ELANERAB9ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
CN-116615415-A Gas generating agent, adhesive composition, and adhesive sheet 大日本印刷株式会社 2023-08-18 CN disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
EP-3062151-B1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM MITSUBISHI GAS CHEMICAL CO (JP) 2021-05-05 EP disclosed
EP-3141957-B1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-24 EP disclosed
EP-3279728-B1 RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-17 EP disclosed
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-31 US disclosed
US-10816898-B2 2020-10-27 US disclosed
US-20200262787-A1 OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-20 US disclosed
US-7871751-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-01-18 US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
EP-2080750-A1 RADIATION-SENSITIVE COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2009-07-22 EP disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed
US-7323284-B2 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2008-01-29 US disclosed
EP-1739485-A1 RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2007-01-03 EP disclosed
US-20030022095-A1 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2003-01-30 US disclosed
EP-0409520-B1 Novel dialkyl peroxides, production method and use thereof NIPPON OILS & FATS CO LTD (JP) 1994-09-14 EP disclosed
US-5091586-A Photolysis type or pyrolysis type forming agents NIPPON OIL AND FATS COMPANY, LIMITED (JP) 1992-02-25 US disclosed
EP-0409520-A2 Novel dialkyl peroxides, production method and use thereof NIPPON OIL AND FATS COMPANY, LIMITED (JP) 1991-01-23 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 ALDH1A1 3830/4885SRD5A2 2223/4885ELANE 1864/4885
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD C9, C1R, RAD51 ALDH1A1 1553/4885SRD5A2 1677/4885ELANE 2684/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALDH1A1 1540/4885SRD5A2 1464/4885ELANE 3111/4885
US-20200262787-A1 OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF TERB1, C5, TERT ALDH1A1 2299/4885SRD5A2 2385/4885ELANE 1640/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 ALDH1A1 1078/4885SRD5A2 3185/4885ELANE 2412/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALDH1A1 1540/4885SRD5A2 1464/4885ELANE 3111/4885
US-10816898-B2 C5, C9, H1-0 ALDH1A1 135/4885SRD5A2 381/4885ELANE 1194/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.