SCHEMBL547762

SCHEMBL547762

O=S(=O)(C1CCCCC1)S(=O)(=O)C1CCCCC1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.41
CA12 O43570 2/20 0.41
CA7 P43166 2/20 0.41
CA14 Q9ULX7 2/20 0.41
CA2 P00918 2/20 0.38
CA9 Q16790 1/20 0.36
APLNR P35414 2/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
LOXL2 Q9Y4K0 3/20 0.32
LOX P28300 1/20 0.32
EPHX2 P34913 1/20 0.32
EPHX1 P07099 1/20 0.32
ALDH1A1 P00352 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24629023 0.79 CA1 (0.41) CA1CA12CA7CA14CA2
SCHEMBL775322 0.79 CA1 (0.41) CA1CA12CA7CA14CA2
SCHEMBL3155782 0.79 CA1 (0.41) CA1CA12CA7CA14CA2
SCHEMBL11889594 0.79 CA1 (0.41) CA1CA12CA7CA14CA2
SCHEMBL6113279 0.78 CA1 (0.39) CA1CA12CA7CA14CA2
SCHEMBL329460 0.76 CA1 (0.39) CA1CA12CA7CA14CA2
SCHEMBL329393 0.76 CA1 (0.39) CA1CA12CA7CA14CA2
SCHEMBL3003 0.76 CA1 (0.39) CA1CA12CA7CA14CA2
SCHEMBL7783201 0.76 CA12 (0.31) CA1CA12CA7CA14EPHX2
SCHEMBL14606349 0.76 CA12 (0.31) CA1CA12CA7CA14LOXL2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 273 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
EP-4617775-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-17 EP disclosed
EP-4600743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN MEMBRANE, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
EP-4600741-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
US-20040106063-A1 Resist composition HATAKEYAMA JUN (JP) 2004-06-03 US disclosed
US-6677101-B2 REACTIVITY, RIGIDITY AND ADHESION TO THE SUBSTRATE, AND UNDERGOES A LOW DEGREE OF SWELLING DURING DEVELOPMENT; RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-13 US disclosed
US-6673511-B1 PHOTORESISTS COMPRISING TERTIARY AMINES, SOLVENTS, ACID GENERATORS AND ADDITION POLYMERS HAVING ACID-LABILE GROUPS USED FOR LITHOGRAPHY AND HAVING HIGH SENSITIVITY, RESOLUTION AND CORROSION RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed
US-20030224290-A1 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20020136981-A1 Resist material and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-26 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-0675410-B1 Resist composition for deep ultraviolet light WAKO PURE CHEM IND LTD (JP) 1999-08-04 EP disclosed
US-5780206-A USING AN ANTHRACENE DERIVATIVE AS AN ABSORBER ON HIGHLY REFLECTIVE SURFACES; ALKALI-SOLUBLE POLYMERS; GENERATION OF ACID CATALYSTS; FINE PATTERNS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1998-07-14 US disclosed
US-5695910-A RESIN BECOMES ALKALI SOLUBLE BY ELIMINATING PROTECTIVE GROUPS BY ACTION OF IN SITU GENERATED ACID WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1997-12-09 US disclosed
EP-0675410-A1 Resist composition for deep ultraviolet light WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1995-10-04 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 CA1 29/4885CA12 200/4885CA7 327/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 CA1 27/4885CA12 10/4885CA7 235/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 CA1 1162/4885CA12 2017/4885CA7 1589/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.