SCHEMBL547983

SCHEMBL547983

C[CH]C(=O)OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.44

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.44
NPSR1 Q6W5P4 2/20 0.41
CYP19A1 P11511 4/20 0.39
GLA P06280 1/20 0.39
CYP17A1 P05093 3/20 0.37
CA2 P00918 1/20 0.37
ALDH1A1 P00352 3/20 0.36
EPHX2 P34913 2/20 0.36
THRB P10828 2/20 0.35
CYP2C9 P11712 1/20 0.35
LMNA P02545 2/20 0.35
HTT P42858 2/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
EPHX1 P07099 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1337900 0.84 NPSR1 (0.42) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL1337905 0.84 NPSR1 (0.42) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL9274200 0.83 THRB (0.44) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL2307504 0.83 THRB (0.44) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL7536676 0.83 THRB (0.44) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL31489866 0.81 NAAA (0.41) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL14457946 0.80 NAAA (0.42) NAAANPSR1CYP19A1GLACYP17A1
Methyl Alcohol SCHEMBL17107776 0.80 NAAA (0.42) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL9101840 0.80 NAAA (0.39) NAAANPSR1CYP19A1GLACYP17A1
SCHEMBL9101834 0.80 NAAA (0.39) NAAANPSR1CYP19A1GLACYP17A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7351521-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2008-04-01 US claimed
US-20070172762-A1 Photoresist composition for deep ultraviolet lithography DAMMEL RALPH R 2007-07-26 US claimed
US-20070154841-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2007-07-05 US claimed
US-7211366-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-05-01 US claimed
EP-1602011-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ Electronic Materials USA Corp. (US) 2005-12-07 EP claimed
WO-2004074928-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-02 WO claimed
US-20040166434-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US claimed
US-20040166433-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US claimed
CN-108008600-B Radiation-sensitive composition 三菱瓦斯化学株式会社 2021-02-09 CN disclosed
EP-2080750-B1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2020-07-29 EP disclosed
US-9897913-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-20 US disclosed
US-9417523-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive composition used therein, resist film, manufacturing method of electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 US disclosed
US-20150030980-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2015-01-29 US disclosed
US-20150010858-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION USED THEREIN, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-01-08 US disclosed
US-8846292-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-30 US disclosed
WO-2013147311-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION USED THEREIN, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-10-03 WO disclosed
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-8110334-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-02-07 US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
EP-2080750-A1 RADIATION-SENSITIVE COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2009-07-22 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION PARG, RAD51, SRMS NAAA 3878/4885NPSR1 1989/4885CYP19A1 1064/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 NAAA 3153/4885NPSR1 2095/4885CYP19A1 1447/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.